Registered HIGH RELIABILITY FIELD EFFECT POWER DEVICE AND MANUFACTURING METHOD THEREOF

Inventors: Jongmin Lee, Min Byoung-Gue, Hyung Sup Yoon, Jong-Won Lim, Kim Seong-Il, Hokyun Ahn, Kyu Jun Cho, Kim Dong-Young, Dong Min Kang, Jae Won Do, Hae Cheon Kim, Jung Hyunwook, Ju Chull Won, Lee Sang-Heung

Project Code: 14PB5600, Development of Core Modules and Transceiver for Digital Wireless Communications Based on Software, Hyung Sup Yoon

Abstract: The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.

KSP Keywords: High Reliability, Leakage Current, Manufacturing method, Power device, Transfer layer, Trapping effects, barrier layers, buffer layer, field effect, passivation layer

패밀리 특허 목록
Status	Patent	Country	KIPRIS
Registered	고신뢰성 전계효과 전력 소자 및 그의 제조 방법	KOREA