Patent

Registered hBN(Hexagonal Boron Nitride)을 이용한 고방열성 반도체 소자 및 그 제조방법

Inventors
최일규, 김해천, 임종원, 안호균, 이상흥, 장성재, 노윤섭, 정현욱, 김성일
Application No.
2021-0144781 (2021.10.27)
Publication No.
10-2022-0126198 (2022.09.15)
Registration No.
2712120 (2024.09.25)
Country
KOREA
Project Code
20VU1100, Development of self-reliance platform in defense advanced semiconductor materials and components for weapon system, Jong-Won Lim
Family
 
패밀리 특허 목록
Status Patent Country KIPRIS
Registered Fabrication of Semiconductor Devices with Highly Heat Dissipation Property by using hBN and Manufacturing Thereof UNITED STATES