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Registered Fabrication of Semiconductor Devices with Highly Heat Dissipation Property by using hBN and Manufacturing Thereof

Inventors
Choi Ilgyu, Jong-Won Lim, Kim Seong-Il, Youn Sub Noh, Jung Hyunwook, Sungjae Chang, Hae Cheon Kim, Hokyun Ahn, Lee Sang-Heung
Application No.
17/562587 (2021.12.27)
Registration No.
12131978 (2024.10.29)
Country
UNITED STATES
Project Code
20VU1100, Development of self-reliance platform in defense advanced semiconductor materials and components for weapon system, Jong-Won Lim
KSP Keywords
Boron nitride(BN), Heat Dissipation, Hexagonal boron nitride(h-BN), semiconductor device
Family
 
패밀리 특허 목록
Status Patent Country KIPRIS
Registered hBN(Hexagonal Boron Nitride)을 이용한 고방열성 반도체 소자 및 그 제조방법 KOREA