ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Algan/Gan Heterostructure Device Performance Normally-Off T-Shaped Gate Gate Recess Breakdown Voltage(BDV) Maximum Oscillation Frequency Power Amplifiers(PAs) T-Gate Components Technology 5 Nm Compound Semiconductor Gate Dielectric Gate Length Schottky Barrier Diode(SBD) Field Plate Sic Substrate Electrical Properties(I-V curve) Recessed Gate Metal-Insulator-Semiconductor(MIS) Gan Heterostructures Carrier Mobility Dielectric Layer Electrical Characterization Radiation Hardness Sapphire Substrates 30 Ghz Enhancement-Mode Two-Step Pseudomorphic High Electron Mobility Transistor(pHEMT) Passivation Layer Dc Characteristics And Gate Etching Conditions Gate Insulator Surface Treatments Next-Generation Threshold Voltage Shift High Performance 6 Ghz Rf Characteristics S-Band Depletion Mode Channel Thickness Silicon Carbide(3C-SiC) Proton Radiation Inductively-Coupled Plasma(ICP) Gan Hemt Devices Off-State Leakage Power Semiconductor Via-Hole Head Size Power Characteristics Device Characteristics Device Properties Frequency Range Dc-Dc Converters Algaas/Ingaas/Gaas Phemts Comparative Study Mechanical Stress Gate Resistance Nitride Layer Power Losses Silicon Nitride 3 V Drain Voltage Two-Dimensional Electron Gas(2DEG) Proton Irradiation Center Frequency Gas Mixture 9.5 GHZ Minimum Noise Figure Self-Heating Effect(SHE) Microwave Characteristics High Gain Stress Measurement Stray Inductance Device Degradation Gate Width Gate Bias Stress Diode Ideality Factor Low-Rate Saturation Current 10 Ghz Gate Leakage Current Back Barrier Power Inductor National Defense Smart Lighting Fabrication Process Multilayer Circuit Gan Hemt Technology Transconductance (Gm) Sensor Node Platform Development Bi-Layer E-Beam Lithography Light Sources Performance Degradation Schottky Diode Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Optical Communications Gan-On-Sic Hemt Millimeter-Wave Wireless(MMW) Wireless System Total Ionizing Dose Effects Electrical Characteristics Fiber Optic Power Amplifier Mmic Recess Depth Thin Film Resistor Hetero-Interface High Power Applications Temperature Dependence Sic Device X-Band Applications Parasitic Effects Antenna Gain Turn-Off Class B Low Voltage Insulating Layer Dielectric Resonator Antenna(DRA) Access Region Current Collapse Dc Output Contact Region Hexagonal Boron Nitride(h-BN) Return Loss(RL) Wet Chemical Etching Aperture Coupled On/Off Current Ratio Reliability Test Electromagnetic Interference Carrier Concentration Rf Power Dbc Substrate 220 Ghz Equivalent Circuit Model(ECM) Electron Trapping Reverse Recovery Charge Input And Output Filtering Function Icp Etching Compressive Stress Circuit Board Thermal Properties Narrow-Band Filtering Gate Voltage Etch Rates Current Status Power Performance Output Characteristics Linear Extrapolation Double-Deck Theoretical And Experimental Analysis Load-Pull Schottky Contacts Low Current Radiation Tolerance Ka-Band Electrical Resistance Recess Gate Low Noise Amplifier(LNA) Channel Layer Radar System Performance Analysis 20 Nm Mobile Handset Silicon Substrate Mm-Wave Applications Wireless Personal Area Network(WPAN) Maximum Output Power Metamorphic High Electron Mobility Transistor(mHEMT) 18 Ghz Thermal Behavior Gate Capacitance Atomic Force Microscope(AFM) Charge Trapping Radar Applications Sic Sbd Tensile Stress Input Voltage Parallel Feedback Power Factor Correction (Pfc) Converter Mobility Behavior Gain Flatness Dynamic Characteristics Pull Test Oxygen Plasma Treatment Transmission Electron Microscopy(TEM) Degradation Mechanism Matching Network Parasitic Capacitance Power Gain Power Added Efficiency(PAE) High Voltage Power Hemt Unconditional Stability Etch Depth Gate Shape Commercial Products Noise Level Mmic Power Amplifier 55 Ghz 700 V Transfer Characteristics Power Conversion System Metal Contact Algan/Gan Mis-Hemt 5g Mobile Co-Fired Ceramics Small Signal Gain Channel Mobility High Temperature Storage Network Applications Trapped Charge Tetramethylammonium Hydroxide Pre-Passivation Plate Structure Metal Deposition Microstrip Coupled Line Ceramic Technology Subthreshold Slope(SS) Switching Characteristics Wireless Local Area Networks(WLANs) Passivation Thickness Load Conditions Gan Surface Atomic Composition 40 Nm Rapid Thermal Annealing(RTA) Noise Characteristics High Output Power Nanometer-Scale Critical Defects Linear Energy Transfer True-Time Delay Millimetre-Wave Measurement Results Transport Characteristics Atomically Thin Level Shifter Practical Implementation Hole Trapping Ohmic Contact Resistance Hot Electrons Ground Planes(GP) Metal-Semiconductor Interface Load Change Turn-On Threshold Voltage Heterostructure Field Effect Transistors Temperature And Pressure Rated Power Shunt Feedback On-Chip Gan Films Line Type 2d Material MOS-HEMT Resistive Component Radiation-Induced Contact Interface Low Temperature Co-Fired Ceramic (Ltcc) Substrate O 3 Growth Pressure 70 Ghz Microelectronic Devices Satellite Communication System Solid State Power Amplifier Hysteresis Phenomenon Load Regulation I-V Characteristic(Transport property) Temperature Humidity Bias(THB) Diode Characteristics Heat Dissipation Etch-Stop Input Power C-Plane Sapphire Substrate Mobility Extraction Method Etch Selectivity Capacitive Coupling System In Package(SIP) Data Transfer Coulomb Scattering Parasitic Components Etching Method Vt Shift Rf Isolation Surface Layer Gate Coupling Control Gate High Figure Of Merit Treatment Process Voltage Performance Trapping Effects Transistor Characteristics High Rate Property Improvement Carrier Transport Noise Performance Time Exponent Fine Control Radio Frequency (Rf) Performance Optimum Thickness Gate Operation Asynchronous Processor Contact Reliability Electrical Measurements Human Body Model(HBM) Device Modeling Organic Vapor Battery Electric Vehicles Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Patch Resonator Temperature Range Lattice Temperature Quality-Factor(Q-factor) Surface Wave Silicon Heterojunction Full-Load Forward Current Wire Bonding Bias Circuit Lead Free Solder Alloy Different Temperatures Radiation Resistance Degradation Rate Etch Profile X-Ray Photoelectron Spectroscopy (Xps) Channel Quality Capping Layer Gaas Mmic Chemical Deposition Parallel-Plate Initialization Vector(IV) Accurate Model Epitaxial Wafer Junction Temperature Semiconductor Heterostructure Pin Diode Ceramic Substrate Gan Epilayer Wide Beamwidth Dislocation Density Dc Measurements Stage Structure Coupling Effects Transmission Line Model Bandwidth Enhancement Gas Channel Buffer Structure Open Stub Lumped Elements Gas Reduction Gate Foot Rf Application Process Technique Drain Electrode Gan Power Device Cost-Effective Radio Frequency Applications Cross Regulation Quality Improvement Dynamic Load Electron Confinement Rf Properties Etching Technique 2-D Electron Gas Etching Process Diode Parameters High Temperature Characterization Thermal Stability(TGA) Sic Mosfet Applied Physics Layer Composition Thickness Variation Microstrip Line Top Electrode 1200 V Subthreshold Swing(SS) Anode And Cathode Energy Barrier Insertion Loss Atomic Force Microscopy (Afm) Direct Bonded Copper(DBC) Cleaning Process Scanning Electron Microscopy(S.E.M.) Measurement Data Output Stability State-Of-The-Art Continuous Wave(CW) Edge-Type Simplified Circuit Model Etching Rate Double-Gate(DG) High Current Electric Bike Cross-Sectional Area(CSA) Gold Plating Surface Morphology Lattice Constants Low Damage Floating Gate Quaternary Alloy High-Density Bottom Plate Hydrogen Silsesquioxane Amplifier Design Energy Levels Mobile Devices Wet And Dry Etching Ultralow Power(ULP) Wafer-Scale Pulsed Mode Semiconductor Package Gate Control Temperature Profile Direct Contact Van Der Waals Heterostructure Lattice Matched Loss Characteristics Average Efficiency Current-Voltage Measurements Cvd Diamond Static And Dynamic Performances Stable Structure Contact Area Metal Stacking Carrier Transfer Single-Layer Electronics And Optoelectronics Mobility Degradation Ohmic Metal Fin Width Fabrication Technology Active Region Dual Output Atomic Layer Deposition Method Thermal Cycling Metal Layer Surface Mount Device Antenna Structure Trap Sites Theoretical Calculation Surface Treatment Method Saturation Drain Current Storage Life Structure Analysis Dot Pattern Switching Loss Plasma Process Barrier Layers Gan Power Amplifier I-V Measurement Interface Quality Bonding Structure Technical Development Central Region As 2 Selective Area Oxide-Semiconductor Field-Effect Transistors Output Ripple Van Der Waals Interaction Width Effects Interface Trap Power Factor Correction Converter Multi-Layer Substrate Sin Passivation Wet Etching 5g Wireless Communication Yield Enhancement Device Applications Gan Device Charging Time Low Sheet Resistance Large-Scale Growth Temperature Failure Analysis(FA) Operating Frequency X-Ray Diffraction (Xrd) Fluorine Ions Design And Implementation F Max Lossy Transmission Line Aluminum Wires Sin X Carbon-Doped Systematic Study Ltcc Technology 5g System Power Limiter Cascode Mixer Radiation Effects Line Regulation Key Device Gan-On-Diamond Half-Bridge Power Module Gan Capping Thick Copper Digital Circuit Scattering Parameters(S-parameters) Native Oxide Layer Reflection Loss Broad Bandwidth Optimum Length Metal Interface Energy Dispersive X-Ray Spectroscopy(EDX) Radio Over Fiber(ROF) 94 Ghz Operation Test Reverse Voltage Composite Metal Multi-Layer Metal Spectroscopic Analyses Radiated Emission Surface Defects Physical Model Various Conditions Matching Circuit Insertion Layer Degradation Factor Surface Characteristics Wideband Operation Direct Current Resistance(DCR) Frequency Variation Low Parasitic Inductance Digital Etch Applied Bias Reference Device Conduction Loss Switching Frequency Inter-Stage Epitaxial Layer Inp Hemt Ac Stress High-Efficiency Operation Main Patch Down-Conversion Single-Gate(SG) Iii-Nitrides Process Technology Power Signal Operating Parameters Thermal Performance Fin-Gate Plasma Damage Snap-Back Dc Current Conversion Gain Current Density Capacitance-Voltage Millimeter-Wave Band Different Modes Contact Degradation Direct Current Characteristics Stress Effects Double Plasma Form Factor C-Doped Rf Receiver Via Etch 60ghz Communication Stop Layer Si-Based Electro-Static Discharge(ESD) High Reliability State Performance Deterioration Mechanism Circuit Complexity Output Power Density Three-Terminal Low Annealing Temperature Efficiency Improvement Reactive Ion Etching(RIE) Two-Dimensional Simulation Cu Film Specific Contact Resistance Device Reliability Double-Pulse Small Size Semiconductor Packaging Channel Properties Power Converter 5g Network Laser Lift-Off Metal Pattern Metal Diffusion Input Reflection Coefficient Stress Conditions Noise Mitigation Mobile System Atomic Force Microcopy 77 Ghz High Power Devices Patch Antenna Maximum Frequency Pulsed Power Thermal Conductivity Dynamic Test Pulse Power Stress Engineering Switching Device Displacement Damage Common-Source Lateral Dimensions High-Frequency Applications Thz Imaging System Global Standards Frequency Properties Interference Test Actual Operation High Power Density Wireless Communication System 3.5 Ghz High Frequency Band Signal Leakage Device Packaging Antenna Bandwidth Fluoride-Based Plasma Treatment Thermal Effects Charging Effects Metal-Insulator-Metal (Mim) Capacitor Stability Improvement 2.4 Ghz Lithography Process Normally-On Unconditionally Stable CF 4 Blocking Voltage Various Substrates Electrical Engineers Stability Parameter Low Switching Front-Side Dual Gate(DG) Supply Voltage Transfer Rate Substrate Effects Ohmic Behavior Radio Frequency Characteristics Gan Buffer Layer Switching Noise Metalorganic Chemical Vapor Deposition Performance Deterioration Growth Conditions Thermoelectric Device Dual Stack Output Voltage Temperature Effect System Cost Aln Substrate Smooth Morphology Current Gain Cutoff Frequency Crystalline Quality Storage Test Inductance Extraction Trans-Impedance Amplifier(TIA) Xrd Data Pulse Generator High-Temperature Operation Tmah Etching Low Loss Transistor Devices Current-Voltage Characteristics Nicr Thin Film 28 Ghz Improved Performance Dangling Bonds Defect-Free Air-Bridge Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Performance And Reliability