Journal
|
2024 |
Precharge switch based on metal–oxide–semiconductor-controlled thyristor for power relay assembly of battery electric vehicles
Dong Yun Jung
ETRI Journal, v.권호미정, pp.1-12 |
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Conference
|
2024 |
Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs
S.-J. Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283 |
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|
Journal
|
2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sung-Jae Chang
ETRI Journal, v.권호미정, pp.1-13 |
0 |
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Journal
|
2024 |
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Hyun-Wook Jung
Materials Science in Semiconductor Processing, v.170, pp.1-5 |
0 |
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Conference
|
2024 |
The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs
Sung-Jae Chang
한국반도체 학술대회 (KCS) 2024, pp.397-397 |
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|
Conference
|
2023 |
W-대역 GaN MIM 커패시터 모델링
이상흥
한국전자파학회 종합 학술 대회 (추계) 2023, pp.112-112 |
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|
Conference
|
2023 |
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
Hyun-Wook Jung
The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
|
|
Conference
|
2023 |
Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
Sung-Jae Chang
The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
|
|
Conference
|
2023 |
Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System
Sung-Jae Chang
한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3 |
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Journal
|
2023 |
Human body model electrostatic discharge tester using metal oxide semiconductor-controlled thyristors
Dong Yun Jung
ETRI Journal, v.45, no.3, pp.543-550 |
1 |
|
Journal
|
2023 |
LTCC-Based DC-DC Converter for Reduction of Switching Noise and Radiated Emissions
Hyun Gyu Jang
Journal of Electromagnetic Engineering and Science, v.23, no.3, pp.251-258 |
0 |
|
Journal
|
2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sung-Jae Chang
Nanomaterials, v.13, no.5, pp.1-13 |
0 |
|
Conference
|
2023 |
Semiconductor relay using a MOS-Controlled Thyristor
정동윤
한국반도체 학술대회 (KCS) 2023, pp.794-794 |
|
|
Journal
|
2022 |
Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance
Dong Yun Jung
Journal of Electromagnetic Engineering and Science, v.22, no.6, pp.686-688 |
1 |
|
Conference
|
2022 |
Mechanisms of Device Degradation Induced by Proton Irradiation in the GaN-based MIS-HEMTs
Sung-Jae Chang
International Conference on Accelerators and Beam Utilizations (ICABU) 2022, pp.45-45 |
|
|
Conference
|
2022 |
Characterization of a P-Tube-based PIN Limiter Diode for RF Receiver Protectors
Doo-Hyung Cho
International Conference on Consumer Electronics (ICCE) 2022 : Asia, pp.575-577 |
|
|
Conference
|
2022 |
Analysis of Electrical Characteristics of 2500V Class MOS Controlled Thyristor (MCT) device for Pulse power applications
Doohyung Cho
Euro-Asian Pulsed Power Conference (EAPPC) 2022, pp.1-2 |
|
|
Conference
|
2022 |
Research on X-band GaN Low Noise Amplifier MMIC
노윤섭
한국전자파학회 종합 학술 대회 (하계) 2022, pp.764-764 |
|
|
Conference
|
2022 |
Output Noise Improvement for Power Supply by Reducing Stray Inductance
장현규
한국전자파학회 종합 학술 대회 (하계) 2022, pp.555-555 |
|
|
Conference
|
2022 |
InAlGaN/GaN HEMTs with over cut-off frequency of 160 GHz
Sung-Jae Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
|
|
Conference
|
2022 |
X-band Microstrip Isolator with NiCr thin film resistor for Aircraft/Ship Radar Application
Ho-Kyun Ahn
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
|
|
Conference
|
2022 |
Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs
Hyun-Wook Jung
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
|
|
Journal
|
2022 |
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
Soo Cheol Kang
Current Applied Physics, v.39, pp.128-132 |
0 |
|
Conference
|
2022 |
Impact of T-Gate Head Size on Frequency Properties in GaN-based HEMTs
Sung-Jae Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
|
|
Conference
|
2022 |
Comparison of Characterization of IGBT, SiC MOSFET, and MCT for a Pre-charge Switch in Electric Vehicles
정동윤
대한전자공학회 학술 대회 (하계) 2022, pp.1613-1616 |
|
|
Conference
|
2022 |
X-band 25W GaN Power Amplifier MMIC Development
노윤섭
통신 정보 합동 학술 대회 (JCCI) 2022, pp.1-1 |
|
|
Conference
|
2022 |
LTCC-based DC-DC converter for miniaturization of power conversion system and radiated noise reduction
장현규
한국전자파학회 종합 학술 대회 (동계) 2022, pp.66-67 |
|
|
Journal
|
2022 |
Switching and Heat-Dissipation Performance Analysis of an LTCC-Based Leadless Surface Mount Package
Dong-Yun Jung
Journal of Semiconductor Technology and Science, v.22, no.1, pp.1-9 |
1 |
|
Conference
|
2022 |
Ku-band SPDT Switch MMIC Design Using 0.2um GaN HEMT Process
노윤섭
한국전자파학회 종합 학술 대회 (동계) 2022, pp.354-354 |
|
|
Conference
|
2022 |
Optimization of Efficiency and Noise for the Power Converter by Gate Resistance
장현규
한국반도체 학술대회 (KCS) 2022, pp.1089-1089 |
|
|
Conference
|
2022 |
Electrostatic Discharge Tester for Human Body Models Using MOS-controlled Thyristors
정동윤
한국반도체 학술대회 (KCS) 2022, pp.728-728 |
|
|
Journal
|
2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
Seokho Moon
ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
10 |
|
Journal
|
2021 |
Theoretical and experimental analysis of a venting clip to reduce stray inductance in high-power conversion applications
Hyun Gyu Jang
ETRI Journal, v.43, no.6, pp.1103-1112 |
0 |
|
Conference
|
2021 |
An Equivalent Circuit Model of Thin Film Resistor for MMICs
이상흥
한국전자파학회 학술 대회 (추계) 2021, pp.102-102 |
|
|
Journal
|
2021 |
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Sung-Jae Chang
Crystals, v.11, no.11, pp.1-10 |
6 |
|
Conference
|
2021 |
A Study on the Ku band GaN Low Noise Amplifier MMIC Design
노윤섭
한국통신학회 종합 학술 대회 (추계) 2021, pp.1-1 |
|
|
Journal
|
2021 |
Power Module Stray Inductance Extraction: Theoretical and Experimental Analysis
Dong Yun Jung
ETRI Journal, v.43, no.5, pp.891-899 |
1 |
|
Journal
|
2021 |
Noise Mitigation in 12-to-5 V DC-DC Converter Using an Embedded Metal Layout Strategy
Dong Yun Jung
IEEJ Transactions on Electrical and Electronic Engineering, v.16, no.9, pp.1289-1291 |
1 |
|
Journal
|
2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
|
|
Conference
|
2021 |
C-band GaN Low Noise Amplifier MMIC Design
노윤섭
한국전자파학회 종합 학술 대회 (하계) 2021, pp.795-795 |
|
|
Conference
|
2021 |
Fabrication and Characteristics of InAlGaN/GaN HEMT
정현욱
대한전자공학회 학술 대회 (하계) 2021, pp.223-225 |
|
|
Conference
|
2021 |
X-band 20W High-Power SPDT MMIC Switch Design by Using ETRI GaN Process
노윤섭
대한전자공학회 학술 대회 (하계) 2021, pp.2268-2270 |
|
|
Conference
|
2021 |
Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs
장성재
대한전자공학회 학술 대회 (하계) 2021, pp.93-96 |
|
|
Conference
|
2021 |
Device Performance Improvement Using High Thermal Conductivity Substrate/film in GaN-based HEMTs
장성재
대한전자공학회 학술 대회 (하계) 2021, pp.219-221 |
|
|
Conference
|
2021 |
Analysis of High Voltage MCT (MOS Controlled Thyristor) Device For Pulse Power System
조두형
대한전자공학회 학술 대회 (하계) 2021, pp.2557-2558 |
|
|
Conference
|
2021 |
Analysis of Limiter Characterization by PIN Diode Connection Method
정동윤
대한전자공학회 학술 대회 (하계) 2021, pp.696-698 |
|
|
Conference
|
2021 |
Analysis for Dynamic Characteristics of Metal-Oxide-Semiconductor (MOS) Controlled Thyristor (MCT) Depending on Snap-Back Effect
Hyun Gyu Jang
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2021, pp.487-489 |
|
|
Conference
|
2021 |
X-band 20W Power Amplifier MMIC Developement Using 0.2um GaH HEMT Process
노윤섭
통신 정보 합동 학술 대회 (JCCI) 2021, pp.1-1 |
|
|
Conference
|
2021 |
GaN 기반 MIM 커패시터의 수율 및 균일도 분석
이상흥
한국전자파학회 종합 학술 대회 (동계) 2021, pp.153-153 |
|
|
Conference
|
2021 |
Broadband SPDT Switch MMIC Development Using 0.2um GaN HEMT Process
노윤섭
한국전자파학회 종합 학술 대회 (동계) 2021, pp.139-139 |
|
|
Conference
|
2021 |
Analysis of Parasitic Effects by Bonding Structure
Hyun Gyu Jang
International Conference on Electronics, Information and Communication (ICEIC) 2021, pp.434-435 |
0 |
|
Conference
|
2021 |
Switching and Heat-dissipation Performance Analysis of an LTCC-based Leadless Surface Mount Package Using a Power Factor Correction Converter
Dong Yun Jung
International Conference on Electronics, Information and Communication (ICEIC) 2021, pp.811-813 |
1 |
|
Journal
|
2020 |
Stability and Reliability of LTCC-based 5/12 V Dual Output DC-DC Converter with High Efficiency and Small Size
Dong Yun Jung
Microelectronics Journal, v.106, pp.1-11 |
6 |
|
Conference
|
2020 |
Efficiency Improvement of Power Conversion System with Multilayer Power Inductor
Hyun Gyu Jang
International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.137-140 |
1 |
|
Journal
|
2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sung-Jae Chang
Nanomaterials, v.10, no.11, pp.1-11 |
9 |
|
Journal
|
2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Soo Cheol Kang
Nanomaterials, v.10, no.11, pp.1-9 |
5 |
|
Conference
|
2020 |
C-band 30W SPDT Switch MMIC Development Using 0.2um GaN Process
노윤섭
대한전자공학회 학술 대회 (추계) 2020, pp.152-153 |
|
|
Conference
|
2020 |
Multi-layer Ceramic based Surface Mount Device Packaging for 1200 V and 1700 V SiC SBD Power Semiconductors
Dong Yun Jung
International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.603-606 |
3 |
|
Conference
|
2020 |
G03-1728 - Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sung-Jae Chang
PRiME 2020, pp.1-3 |
|
|
Conference
|
2020 |
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sung-Jae Chang
PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526 |
1 |
|
Conference
|
2020 |
Power Conversion Module using LTCC substrate Interconnected to Power Inductor with Low DCR
Hyun Gyu Jang
Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-5 |
1 |
|
Conference
|
2020 |
1700 V Full-SiC Half-bridge Power Module with Low Switching Loss
Dong Yun Jung
Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4 |
1 |
|
Conference
|
2020 |
Fabrication of T-gate using low-k material on AlGaN/GaN HEMT
정현욱
한국전자파학회 종합 학술 대회 (하계) 2020, pp.893-893 |
|
|
Conference
|
2020 |
Frequency characteristics change according to the source and drain spacing of AlGaN / GaN HEMT device
강수철
한국전자파학회 종합 학술 대회 (하계) 2020, pp.543-543 |
|
|
Conference
|
2020 |
Characteristics of AlGaN/GaN HEMT with Selective Internal Inactive Area
이종민
대한전자공학회 학술 대회 (하계) 2020, pp.488-489 |
|
|
Journal
|
2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
|
|
Journal
|
2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Hyun-Wook Jungy,
Jae-Won Do
Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
|
Conference
|
2020 |
Ohmic Contacts with Recess-etched and TMAH-treated Nanometer-scale Patterns for Improved Performance and Reliability in AlGaN/GaN HEMTs
Hyun-Wook Jung
한국 반도체 학술 대회 (KCS) 2020, pp.790-790 |
|
|
Conference
|
2020 |
X-band Microstrip Isolator for Aircraft/Ship Radar Application
Ho-Kyun Ahn
한국 반도체 학술 대회 (KCS) 2020, pp.1-1 |
|
|
Conference
|
2020 |
Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2020, pp.783-783 |
|
|
Journal
|
2020 |
Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel
김정진
전기전자재료학회논문지, v.33, no.1, pp.16-20 |
|
|
Journal
|
2019 |
Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
Sung-Jae Chang
ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 |
10 |
|
Conference
|
2019 |
64 GHz/50 dBOhm Trans-Impedance Amplifier Design Using Gain-Peaking Inductor for Bandwidth Enhancement
장우진
대한전자공학회 학술 대회 (추계) 2019, pp.115-118 |
|
|
Conference
|
2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
김진식
대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
|
|
Journal
|
2019 |
Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits
이상흥
전자통신동향분석, v.34, no.5, pp.71-80 |
|
|
Journal
|
2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
|
|
Journal
|
2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
In-Tae Hwang
Applied Sciences, v.9, no.17, pp.1-13 |
6 |
|
Conference
|
2019 |
Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs
Sung-Jae Chang
Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119 |
|
|
Conference
|
2019 |
77~97 GHz LNA MMIC with 1 dB-Gain Flatness Using Short-Circuited Capacitor
Woojin Chang
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2019, pp.907-910 |
0 |
|
Conference
|
2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung-Seok Lee
한러 과학기술의 날 2019, pp.1-1 |
|
|
Journal
|
2019 |
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
윤형섭
한국전자파학회논문지, v.30, no.4, pp.282-285 |
|
|
Journal
|
2019 |
DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure
Hyeon-Tak Kwak
Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322 |
|
|
Conference
|
2019 |
Design and fabrication of LTCC based delay lines for true time delay module
김동영
한국전자파학회 학술 대회 (동계) 2019, pp.233-233 |
|
|
Journal
|
2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
Jeong-Gil Kim
Solid-State Electronics, v.152, pp.24-28 |
9 |
|
Conference
|
2019 |
5G 이동통신용 Ka-대역 GaN MMIC 전력증폭기
강동민
한국 반도체 학술 대회 (KCS) 2019, pp.627-627 |
|
|
Conference
|
2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
|
|
Journal
|
2019 |
Technical Trends of Semiconductors for Harsh Environments
장우진
The SEMICON Magazine, v.23, pp.28-36 |
|
|
Conference
|
2019 |
Design of LTCC based dual polarization antenna at Ka-band
김동영
한국전자파학회 학술 대회 (동계) 2019, pp.194-194 |
|
|
Conference
|
2019 |
Design of 94 GHz SiGe Mixer MMIC
이상흥
한국통신학회 종합 학술 발표회 (동계) 2019, pp.1076-1077 |
|
|
Journal
|
2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Seong-Il Kim
Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
4 |
|
Journal
|
2018 |
Technical Trends of Semiconductors for Harsh Environments
장우진
전자통신동향분석, v.33, no.6, pp.12-23 |
|
|
Conference
|
2018 |
DC/RF Characteristics of 100nm mHEMT Device Fabricated with Two-step Gate Recessing
윤형섭
한국전자파학회 학술 대회 (추계) 2018, pp.106-106 |
|
|
Journal
|
2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
JUN-HYEOK LEE
IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
35 |
|
Conference
|
2018 |
Design of GaAs MMIC Low Noise Amplifer at W-band
강동민
한국전자파학회 종합 학술 대회 (하계) 2018, pp.368-368 |
|
|
Conference
|
2018 |
E-mode GaN HEMT Devices and PA MMICs for 5G Mobile Handsets
Seong-Il Kim
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2018, pp.255-255 |
|
|
Conference
|
2018 |
GaN Cascode FET with On-Current of 38 A and Blocking Voltage of 450 V
Woojin Chang
대한전자공학회 학술 대회 (하계) 2018, pp.753-755 |
|
|
Conference
|
2018 |
A 20~32 GHz GaN Power Amplifier MMIC Using Lange Couplers for Wideband Operation
Woojin Chang
대한전자공학회 학술 대회 (하계) 2018, pp.119-122 |
|
|
Journal
|
2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
Hyeon-Tak Kwak
Applied Sciences, v.8, no.6, pp.1-14 |
25 |
|
Journal
|
2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
S.-J. Chang
ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90 |
8 |
|
Conference
|
2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
김진식
대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
|
|
Journal
|
2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Hyun-Wook Jung
ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
2 |
|
Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
Dong-Hyeok Son, Young-Woo Jo
Solid-State Electronics, v.141, pp.7-12 |
9 |
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Conference
|
2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
|
|
Conference
|
2018 |
28GHz MMIC Power Amplifier based on 0.15um GaN HEMT Technology
강동민
한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
|
|
Conference
|
2018 |
Comparative Study of Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Gate Recess and F-treatment
Hyun-Wook Jung
한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
|
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Conference
|
2018 |
High Temperature Characterization and Analysis of GaN-on-Diamond FETs
Hyung-Seok Lee
한국 반도체 학술 대회 (KCS) 2018, pp.665-666 |
|
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Conference
|
2018 |
Analysis of Correlations between Efficiency of Power System and Characterictics of Power Device
장현규
한국 반도체 학술 대회 (KCS) 2018, pp.646-646 |
|
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Conference
|
2018 |
Breakdown and Power Characteristics of GaN HEMTs with a Variation of Device Dimensions for S-band Applications
Jong-Min Lee
한국 반도체 학술 대회 (KCS) 2018, pp.667-667 |
|
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Conference
|
2018 |
Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications
Byoung-Gue Min
한국 반도체 학술 대회 (KCS) 2018, pp.663-663 |
|
|
Conference
|
2018 |
스트레스가 질화갈륨 기반 HEMT 소자의 특성에 미치는 영향
S.-J. Chang
한국 반도체 학술 대회 (KCS) 2018, pp.648-648 |
|
|
Journal
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
Solid-State Electronics, v.140, pp.12-17 |
8 |
|
Conference
|
2018 |
Modeling and MMIC design of GaN HEMT device with internal back-side via
김성일
한국 반도체 학술 대회 (KCS) 2018, pp.634-634 |
|
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Conference
|
2018 |
RF Modeling of Backside Via for GaN MMIC
이상흥
한국통신학회 종합 학술 발표회 (동계) 2018, pp.715-716 |
|
|
Journal
|
2018 |
Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric
Maruf A. Bhuiyan
IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 |
17 |
|
Journal
|
2017 |
Technical Trend of Fusion Semiconductor Devices Composed of Silicon and Compound Materials
이상흥
전자통신동향분석, v.32, no.6, pp.8-16 |
|
|
Conference
|
2017 |
Current Status of ETRI's GaN Power Device Technology
Jae Kyoung Mun
International Conference on Advanced Electromaterials (ICAE) 2017, pp.1-1 |
|
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Conference
|
2017 |
차세대 고출력 레이더용 GaN 전력 소자 및 증폭기 기술
문재경
함정기술.무기체계 세미나 2017, pp.1-1 |
|
|
Conference
|
2017 |
Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
S.-J. Chang
International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 |
3 |
|
Conference
|
2017 |
Development of a 0.15 μm GaN HEMT MMIC Process
Haecheon Kim
Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-2 |
|
|
Journal
|
2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon
Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
|
Journal
|
2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jong-Min Lee
Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
7 |
|
Conference
|
2017 |
내부 BVIA가 있는 GaN HEMT 소자 특성 및 모델링
김성일
대한전자공학회 RF/아날로그 회로 워크숍 2017, pp.397-398 |
|
|
Conference
|
2017 |
C-대역 30W급 질화갈륨 기반 내부 정합형 전력 증폭기
강동민
한국전자파학회 종합 학술 대회 (하계) 2017, pp.1-1 |
|
|
Journal
|
2017 |
Growth of 10 nm-Thick AlIn(Ga)N/GaN Heterostructure with High Electron Mobility and Low Sheet Resistance
Jeong-Gil Kim
Physica Status Solidi (B), v.254, no.8, pp.1-5 |
2 |
|
Conference
|
2017 |
X-대역 5W GaN 전력 증폭기 MMIC 설계 및 제작
이상흥
한국전자파학회 종합 학술 대회 (하계) 2017, pp.289-289 |
|
|
Conference
|
2017 |
Investigation of GaN Power FETs for High Power Applications
Hyung-Seok Lee
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2 |
|
|
Conference
|
2017 |
DC and RF Characterization of AlGaN/GaN HEMTs Devices Fabricated Using Digital Gate Recessing
윤형섭
한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1 |
|
|
Conference
|
2017 |
GaN Power Devices Technology for Next-generation High Efficiency IT Components Components
문재경
대한전자공학회 종합 학술 대회 (하계) 2017, pp.2557-2558 |
|
|
Conference
|
2017 |
Via-holes Etching on SiC Substrate Characterized by High Etch Selectivity with GaN Epilayer
Byoung-Gue Min
한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1 |
|
|
Conference
|
2017 |
Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications
Kyu Jun Cho
International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2017, pp.1-3 |
0 |
|
Journal
|
2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae-Won Do
Thin Solid Films, v.628, pp.31-35 |
9 |
|
Journal
|
2017 |
Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs
Sung-Jae Chang
IEEE Electron Device Letters, v.38, no.4, pp.441-444 |
13 |
|
Journal
|
2017 |
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
Hyun-Wook Jung
ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186 |
1 |
|
Journal
|
2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jong-Min Lee
Current Applied Physics, v.17, no.2, pp.157-161 |
12 |
|
Conference
|
2017 |
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
|
|
Conference
|
2017 |
GaN HEMT Device Modeling and MMIC for Ka-band Applications
김성일
한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
|
|
Journal
|
2017 |
ETRI 0.25 μm GaN MMIC Process and X-Band Power Amplifier MMIC
이상흥
한국전자파학회논문지, v.28, no.1, pp.1-9 |
|
|
Conference
|
2016 |
Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric
M. Bhuiyan
Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2 |
|
|
Journal
|
2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
S.-J. Chang
ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
|
Journal
|
2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon
IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
28 |
|
Conference
|
2016 |
Design of a Low Temperature Co-fired Ceramics (LTCC) based Antenna with Broadband and High Gain at 60GHz Bands
Dong-Young Kim
International Conference on Consumer Electronics (ICCE) 2016 : Asia, pp.156-158 |
0 |
|
Conference
|
2016 |
Hydrazine (N2H4)-Based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with A High Quality Interface
Hyun-Wook Jung
International Conference on Solid State Devices and Materials (SSDM) 2016, pp.785-786 |
|
|
Conference
|
2016 |
GaN HEMT 모델링 및 전력 증폭기 MMIC 설계
김성일
대한전자공학회 RF/아날로그 회로 워크숍 2016, pp.590-591 |
|
|
Journal
|
2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
Ho-Kyun Ahn
ETRI Journal, v.38, no.4, pp.675-684 |
4 |
|
Conference
|
2016 |
Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric
Ho-Kyun Ahn
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Characteristics of Enhanced-mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jong-Min Lee
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Influence of Silicon Nitride Layer on MIM Capacitor for MMIC
Min Jeong Shin
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Investgation of GaN Channel Quality on the Device Properties in AIGaN/GaN HEMTs
Sung-Jae Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
Woojin Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions
Byoung-Gue MIN
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Characterization of GaAs-based MIM Capacitor up to 50 GHz
Sang-Heung Lee
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Jae-Won Do
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
Zin-Sig Kim
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
Conference
|
2016 |
X-band 3 W and 6 W Power Amplifier MMICs using ETRI 0.25 μm GaN HEMT
이상흥
대한전자공학회 종합 학술 대회 (하계) 2016, pp.1-3 |
|
|
Conference
|
2016 |
50W 출력 전력 특성을 갖는 0.25um GaN-on-SiC HEMT
강동민
대한전자공학회 종합 학술 대회 (하계) 2016, pp.325-328 |
|
|
Conference
|
2016 |
The Characterization of High Power Density 0.15 μm AlGaN/GaN HEMTs for Their MMIC
Haecheon Kim
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) 2016, pp.W17-W18 |
|
|
Conference
|
2016 |
GaN HEMT Modeling for X-band Applications
김성일
대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 |
|
|
Conference
|
2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
김진식
대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
|
|
Conference
|
2016 |
ETRI 0.25 μm GaN HEMT 공정을 이용한 X-대역 3 W 및 C-대역 5 W 전력 증폭기 MMIC
이상흥
한국전자파학회 종합 학술 대회 (하계) 2016, pp.168-169 |
|
|
Conference
|
2016 |
77GHz 대역 차량 레이더용 유전체 공진기 기반 어레이 안테나 설계
김동영
한국전자파학회 종합 학술 대회 (하계) 2016, pp.291-291 |
|
|
Conference
|
2016 |
Advanced Backend Processing and its Effects on the Performance and the Yield of GaN HEMT Deviceson SiC Substrate
Jae-Won Do
한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
Conference
|
2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jong-Min Lee
한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
|
|
Conference
|
2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Hyun-Wook Jung
한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
Conference
|
2016 |
AlGaN/GaN Power HEMTs for Next Generation Radar Systems
강동민
한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
Conference
|
2016 |
X-band 5W AlGaN/GaN HEMT Power MMICs
김성일
한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
Journal
|
2016 |
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
강동민
한국전자파학회논문지, v.27, no.1, pp.76-79 |
|
|
Journal
|
2016 |
Substrate Embedded Low Temperature Co-Fired Ceramics Antenna with Wide Beamwidth and High Gain at Millimetrewave Band
D.Y. Kim
Electronics Letters, v.52, no.2, pp.98-100 |
2 |
|
Conference
|
2015 |
X-Band 0.2 μm AlGaN/GaN MISFET with SiN-Assisted Double-Deck T-Shaped Gate Structure
Ho-Kyun Ahn
International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1 |
|
|
Conference
|
2015 |
0-30 GHz GaN MIM 커패시터 모델링
이상흥
한국전자파학회 종합 학술 대회 2015, pp.89-89 |
|
|
Conference
|
2015 |
밀리미터파대역 거리 측정 레이더용 평판형 렌즈 안테나 설계
김동영
한국전자파학회 종합 학술 대회 (하계) 2015, pp.1-1 |
|
|
Journal
|
2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon
Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
|
Journal
|
2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho
Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
|
Journal
|
2015 |
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
Byoung-Gue Min
Journal of the Korean Physical Society, v.67, no.4, pp.718-722 |
1 |
|
Conference
|
2015 |
50W GaN RF HEMT를 이용한 9.2 - 9.5GHz 전력 증폭기
강동민
한국전자파학회 종합 학술 대회 (하계) 2015, pp.1-1 |
|
|
Conference
|
2015 |
X-Band Power Amplifier Using 40W GaN-on-SiC HEMT
강동민
대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234 |
|
|
Conference
|
2015 |
Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess
민병규
대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195 |
|
|
Conference
|
2015 |
Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon
International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366 |
|
|
Journal
|
2015 |
A Simplified Circuit Model for GaN-Based MIM Capacitor
Sang-Heung Lee
Information : An International Interdisciplinary Journal, v.18, no.4, pp.1249-1254 |
0 |
|
Journal
|
2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Zin-Sig Kim
Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
2 |
|
Conference
|
2015 |
X-band 40W Pulsed Power Amplifier using 0.2um AlGaN/GaN HEMT
강동민
한국 반도체 학술 대회 (KCS) 2015, pp.192-192 |
|
|
Conference
|
2015 |
Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate
Hyung Sup Yoon
한국 반도체 학술 대회 (KCS) 2015, pp.191-191 |
|
|
Journal
|
2015 |
X-Band 100 W Solid-State Power Amplifier Using a 0.25 μM GaN HEMT Technology
Dong Min Kang
Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 |
6 |
|
Journal
|
2014 |
Technical Trends of Next-Generation GaN Power Amplifier for High-Frequency and High-Power
이상흥
전자통신동향분석, v.29, no.6, pp.1-13 |
|
|
Conference
|
2014 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
Hyung Sup Yoon
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81 |
|
|
Conference
|
2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
|
|
Conference
|
2014 |
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
Dong Min Kang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75 |
|
|
Conference
|
2014 |
L/S-Band 0.5 μm AlGaN/GaN MISFET including SiN-Assisted T-Gate Structure
Ho-Kyun Ahn
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.70-70 |
|
|
Conference
|
2014 |
An Equivalent Circuit Model for GaN-based MIM Capacitor
Sang-Heung Lee
International Symposium on Advanced and Applied Convergence (ISAAC) 2014, pp.1-4 |
|
|
Conference
|
2014 |
LTCC 기반 60GHz 대역 광대역 유전체 공진기 안테나 설계
김동영
한국전자파학회 종합 학술 발표회 2014, pp.1-1 |
|
|
Conference
|
2014 |
GaN 기반 MIM 커패시터 모델링
이상흥
한국전자파학회 종합 학술 발표회 2014, pp.1-1 |
|
|
Conference
|
2014 |
SiC 기판 기반의 스파이럴 인덕터 모델링
이상흥
한국전자파학회 종합 학술 발표회 (하계) 2014, pp.1-1 |
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Conference
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2014 |
LTCC 기반 밀리미터파 대역 패치 안테나 설계
김동영
한국전자파학회 종합 학술 발표회 (하계) 2014, pp.1-1 |
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Conference
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2014 |
Failure Analysis of Backside Via-Hole Process at GaN on SiC HEMT
민병규
대한전자공학회 종합 학술 대회 (하계) 2014, pp.1973-1974 |
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Journal
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2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
Jong-Min Lee
Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450 |
2 |
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Journal
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2014 |
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
Ho-Kyun Ahn
Solid-State Electronics, v.95, pp.42-45 |
17 |
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon
한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Conference
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2013 |
LTCC기반 밀리미터파 대역 광대역 고이득 패치 안테나 설계
김동영
한국전자파학회 종합 학술 발표회 2013, pp.1-1 |
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Conference
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2013 |
LTCC기반 77GHz 대역 자동차 레이더용 안테나 설계
김동영
한국전자파학회 종합 학술 발표회 2013, pp.1-1 |
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Journal
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2013 |
Design of Patch Antenna on LTCC Substrate with Broadband and High Gain at Millimetre Wave Band
D.Y. Kim
Electronics Letters, v.49, no.25, pp.1590-1591 |
3 |
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Journal
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2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
Jong-Won Lim
Thin Solid Films, v.547, pp.106-110 |
9 |
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Conference
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2013 |
Performance of Normally-off AlGaN/AlN/GaN MISFET including a Gate-connected Field Plate
안호균
대한전자공학회 종합 학술 대회 (하계) 2013, pp.1843-1844 |
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Conference
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2013 |
고온 저장 시험에 의한 GaN HEMT 소자의 특성 변화
이종민
한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
Packaged AlGaN/GaN HEMT with 100 W Output Power at 3 GHz
임종원
한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
Device Characteristics of Normally-Off GaN MISFET Including Field Plates
안호균
한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
S-Band 170W Pulsed SSPA Using 30W GaN-on-Si RF Power HEMT
강동민
한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
Characteristics of 30W AlGaN/GaN HEMT Device for X-Band Applications
김성일
한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2012 |
Current Status of GaN Technologies in ETRI
Jae Kyoung Mun
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2 |
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Conference
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2012 |
Packaged GaN HEMT Power Bar with 17 W Output Power at 3 GHz
장우진
한국 반도체 학술 대회 (KCS) 2012, pp.1-2 |
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Conference
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2012 |
Design of 220 GHz Amplifier and Mixer for THz Imaging System
Woojin Chang
International Conference on Electronics, Information, and Communication (ICEIC) 2012, pp.448-449 |
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Conference
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2012 |
Characteristics of 6W AlGaN/GaN HEMT device for X-band application
김성일
한국 반도체 학술 대회 (KCS) 2012, pp.381-382 |
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Journal
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2012 |
Global R&D Trends of GaN Electronic Devices
문재경
전자통신동향분석, v.27, no.1, pp.74-85 |
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Conference
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2011 |
Design of 220 GHz-band Amplifier Using InP HEMT Technology
Woo Jin Chang
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.1120-1122 |
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
장우진
대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Journal
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2010 |
Characteristics of a 60 GHz MMIC Mixer with an Open Stub Microstrip Line
Sang-Heung Lee
Microwave and Optical Technology Letters, v.52, no.6, pp.1341-1345 |
1 |
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Journal
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2009 |
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines
Woo Jin Chang
ETRI Journal, v.31, no.6, pp.741-748 |
9 |
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Conference
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2009 |
60 GHz Amplifier Module Using Low Temperature Co-fired Ceramic Technology
Woo Jin Chang
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2009, pp.1-3 |
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Ho Kyun Ahn
Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
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Journal
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2007 |
High Isolation pHEMT MMIC Switch for 60GHz-band Applications
문재경
Electronic Materials Letters, v.3, no.4, pp.1-5 |
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Conference
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2007 |
Preamplifier for fiber-optic Millimeter wave Wireless LAN
Seon-Eui Hong
Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
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Conference
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2007 |
60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
Woo Jin Chang
Radio and Wireless Symposium (RWS) 2007, pp.377-380 |
4 |
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Journal
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong Won Lim
Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 |
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Conference
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2006 |
High Performance Low Temperature Co-fired Ceramic Modules for 60 GHz WPAN Systems
Jae Kyoung Mun
MRS Meeting 2006 (Fall), pp.1-2 |
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Conference
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2006 |
Fabrication of SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-bands MMICs for 60GHz WPAN System
Ho Kyun Ahn
MRS Meeting 2006 (Fall), pp.1-1 |
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Conference
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2006 |
Preamplifier Design for Fiber-Optic mm-Wave Wireless System
S. Hong
European Microwave Conference (EuMC) 2006, pp.1545-1547 |
1 |
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Conference
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
Jong Won Lim
International Conference on Solid State Devices and Materials (SSDM) 2006, pp.956-957 |
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Conference
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2006 |
Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-Flatness
Woo Jin Chang
International Conference on Solid State Devices and Materials (SSDM) 2006, pp.614-615 |
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Conference
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2006 |
Influence of T-Gate Shape on the Device Characteristics in SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT
Ho Kyun Ahn
International Conference on Solid State Devices and Materials (SSDM) 2006, pp.1-2 |
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Conference
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2006 |
Low Noise and Power Amplifier Modules for 60 GHz Wireless Personal Area Network Applications
Jae Kyoung Mun
한국통신학회 종합 학술 발표회 (하계) 2006, pp.861-863 |
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Conference
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2006 |
V-Band Power Amplifier MMIC with Excellent Gain-Flatness
장우진
대한전자공학회 종합 학술 대회 (하계) 2006, pp.593-594 |
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Conference
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2006 |
60 GHz Low Noise Amplifier MMIC for IEEE802.15.3c WPAN System
장우진
대한전자공학회 종합 학술 대회 (하계) 2006, pp.501-502 |
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 μm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong Won Lim
Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Ho Kyun Ahn
한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
|
2006 |
60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
Woo Jin Chang
Topical Symposium on Millimeter Waves (TSMMW) 2006, pp.159-164 |
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Conference
|
2006 |
Low Noise Amplifier Module for 60 GHz Wireless Personal Area Network (WPAN) utilizing Multilayer Low Temperature Co-fired Ceramic Technology
Jae Kyoung Mun
ESA Workshop on Millimetre Wave Technology and Applications 2006, pp.1-4 |
|
|
Conference
|
2006 |
Design and Implementation of 60 GHz Amplifier MMICs and Module for WPAN System
장우진
한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
|
|
Conference
|
2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
J. W. Lim
한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
|
2005 |
Preamplifier Design with Narrow Band for Fiber-Optic Millimeter-Wave Wireless LAN
Seon Eui Hong
Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
|
Journal
|
2005 |
Design of pHEMT Channel Structure for Single-Pole-Double-Throw MMIC Wwitches
문재경
한국진공학회지, v.14, no.4, pp.207-214 |
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Journal
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2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim
ETRI Journal, v.27, no.3, pp.304-311 |
8 |
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Conference
|
2003 |
Surface mountable packaged 10 Gbit/s photoreceiver module design
김성일
광전자 및 광통신 학술 회의 (COOC) 2003, pp.59-60 |
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Conference
|
2002 |
Preamplifier Design and Fabrication for 10 Gbit/s
홍선의
대한전자공학회 종합 학술 대회 (추계) 2002 : 컴퓨터/반도체 소사이어티, pp.537-540 |
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Conference
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2002 |
Transimpedance Amplifier using InGaP-HBT for 10 Gbit/s Application
홍선의
한국통신학회 종합 학술 발표회 (추계) 2002, pp.1685-1687 |
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