ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Power Amplifiers(PAs) Algan/Gan Heterostructure Normally-Off Gate Length Maximum Oscillation Frequency Low Temperature Cofired Ceramics(LTCC) T-Gate Device Performance Schottky Barrier Diode(SBD) 5 Nm T-Shaped Gate Gate Recess Gan Heterostructures Sic Substrate Radiation Hardness Gate Width Pseudomorphic High Electron Mobility Transistor(pHEMT) Passivation Layer Metal-Insulator-Semiconductor(MIS) Electrical Properties Compound Semiconductor Enhancement Mode(E-mode) Gate Dielectric Dc Characteristics High Performance Recessed Gate And Gate Dielectric Layer Etching Conditions Field Plate Silicon Carbide(3C-SiC) Carrier Mobility Sapphire Substrates Radar System Gate Insulator Output Power Density Device Characteristics Drain Voltage Maximum Output Power Rf Characteristics Power Gain Small Signal Gain High Power Applications Power Semiconductor 6 Ghz Rf Applications Head Size Electrical Characterization Microwave Characteristics Proton Radiation Low-Rate Power Amplifier Mmic Off-State Leakage Threshold Voltage Shift Two-Dimensional Electron Gas(2DEG) Dc-Dc Converters Cvd Diamond Nitride Layer Device Properties S-Band Surface Treatments Gate Resistance Thin Film Resistor Comparative Study Microwave Integrated Circuits(MICs) Silicon Nitride Algaas/Ingaas/Gaas Phemts Two-Step Power Losses Gan Semiconductor 9.5 GHZ Equivalent Circuit Model Parasitic Capacitance Channel Thickness Next-Generation Gan Hemt Technology X-Band Applications Large-Scale Fabrication Process Gan Hemt Devices Microwave Monolithic Integrated Circuits(MMIC) Stray Inductance Components Technology Hexagonal Boron Nitride(hBN) Via-Hole Electrical Characteristics Recess Depth Mechanical Stress Back Barrier Millimetre-Wave Schottky Contacts Key Components Depletion-Mode Turn-Off Self-Heating Effect(SHE) Charge Trapping 7 Mm Silicon Substrate Epitaxial Layer Input Reflection Coefficient Bi-Layer Wireless Systems Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Multilayer Circuit Etching Rate Gate Leakage Current Total Ionizing Dose Effects Wireless Communication Systems Stress Measurement 3 V Switching Devices Proton Irradiation Thermal Properties 10 Ghz Unconditional Stability Power Characteristics Input Voltage Power Inductor Gain Flatness Millimeter-Wave Wireless(MMW) Dc Measurements Gate Bias Stress Sic Mosfet Thermal Behavior Maximum Frequency Atomic Force Microscope(AFM) Power Added Efficiency(PAE) Algan/Gan-On-Si 2.4 Ghz Gan-On-Sic Hemt Device Degradation E-Beam Lithography Low Voltage Insertion Loss 30 Ghz High Gain Electromagnetic Interference(EMI) Mmic Power Amplifier Wireless Personal Area Network(WPAN) Scattering Parameters(S-parameters) Performance Degradation High Power Performance Center Frequency On/Off Current Ratio Performance Analysis Switching Loss Stage Structure Insulated Gate Bipolar Transistor(IGBT) Wireless Local Area Network(WLAN) Weapon System 700 V Recess Gate 18 Ghz Packaging Material Icp Etching Gas Mixtures Etch-Stop Measurement Data Data Center Gallium Arsenide Pulsed Power Nicr Thin Film Low Current Si Substrate High-Frequency Applications Ka-Band Energy Loss Etch Rates Amplifier Design High Power Density Si-Based High Reliability Hetero-Interface Yield Enhancement Pre-Passivation Theoretical And Experimental Analysis Transconductance (Gm) Transfer Characteristics 60 Ghz Wireless Communication Ceramic Technology Temperature Effect Systematic Study Channel Length Atomic Force Microscopy (Afm) Gan-On-Diamond Performance Improvement Displacement Damage Narrow-Band Filtering Receiver Module Energy-Efficient Ion Implantation Power Factor Correction (Pfc) Converter Aperture Coupled Bipolar Transistors Frame Transfer(FT) Channel Layer Power Conversion System Metal Contact 5g Mobile Subthreshold Slope(SS) Matching Network Degradation Mechanism Compressive Stress Channel Mobility Performance And Reliability Ground Plane(GP) Schottky Diode Sic Sbd Gate Shape Tensile Stress Commercial Products High Thermal Conductivity F MAX Double-Deck Tetramethylammonium Hydroxide Parasitic Effects Infrastructure Support Metal Deposition Ribbon Wire Sin X Ohmic Metal Class B Circuit Board State-Of-The-Art Dielectric Resonator Antenna(DRA) Rf Isolation Access Region Wire-Bonding Technique Diamond Substrate Gan Surface Thz Imaging System Mobile Handset Radiated Emission Reliability Test Diode Ideality Factor Diode Parameters Plate Structure Semiconductor Technology Electron Trapping Minimum Noise Figure Output Voltage Light Source Power Hemt Gan Power Amplifier Gain Compression Gate Electrode Trapped Charge Semiconductor Materials Pinch-Off Normally-On Current Status Parallel Feedback Network Applications Three-Terminal Gan Device Sic Device Temperature Dependence Saturation Velocity 220 Ghz Electrical Devices Radiation Tolerance Antenna Gain 70 Ghz Smart Lighting Coplanar Waveguide Feeding(CPW) Ghz Band Wide Bandgap Semiconductor 20 Nm Switching Characteristics Radar Applications High Temperature Storage Dbc Substrate Short-Channel Effects Turn-On Threshold Voltage Filtering Function Microstrip Coupled Line Design And Fabrication Gate Voltage Gan Fet High Power Amplifier Local Oscillation Current Collapse Insulating Layer Input/Output Matching Etch Depth Signal Leakage Cost-Effective Mobility Behavior Electrical Resistance Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Dynamic Characteristics Reverse Recovery Charge Algan/Gan Mishemts Wireless Transceiver Module Transmission Electron Microscopy(TEM) Optoelectronic Devices Central Region Load Conditions Heterogeneous Integration Bottom Plate S-Parameter Measurement Voltage Performance Geometric Parameters Load Impedance Wet And Dry Etching Synthetic Aperture Radar (Sar) Operating Parameters Low Dielectric Constant Lithography Technology High-Frequency Power Amplifier Fine Control Frequency Variation Radiation Energy Fabrication Technology Fluoride-Based Plasma Treatment Device Applications Matching Circuit Model Tests Harsh Environment High-Speed Switching Ohmic Behavior Energy-Dispersive X-Ray Spectroscopy Gan Buffer Layer Bias Circuit Oxygen Plasma Treatment Aluminum Wires Lossy Transmission Line Layer Composition Field Concentration Diamond Semiconductor Thermoelectric Device System Cost Radiation Resistance O 3 Anode And Cathode Material Properties Atomic Layer Deposition Method Plasma Etching Process Metal Diffusion Small-Sized Laser Lift-Off(LLO) Scanning Electron Microscopy(S.E.M.) Growth Temperature Stable Process Plasma Damage Signal Modeling Space Applications Transistor Devices Sheet Thickness Transit Time Data Transfer Current-Voltage Characteristics Operating Condition Pulse Power Different Modes Gas Channel(GC) Surface Layer Molybdenum-Copper Peak Current Co-Integration C-Doped 40 Nm 60ghz Communication Ltcc Technology Interference Test Transistor Characteristics Mobile Devices Working Temperature Nanometer-Scale 3.5 Ghz High Frequency Band Lithography Process Radio Frequency (Rf) Performance Optimum Thickness Linear Extrapolation Surface Defects Various Conditions Hysteresis Phenomenon S-Parameter Extraction Time And Energy Active Phased Array Antenna Number Of Fingers Radio Frequency Applications CF 4 Dynamic Load Reflect Signal S 11 Si Semiconductor Multi-Purpose Electrical Engineers Rf Properties Set Up Sin Deposition High Breakdown Field Radio Frequency Characteristics Thermal Stability Silicon Heterojunction Applied Bias Noise Sources 2 Mm Microstrip Line Double-Pulse Contact Interface Carrier Transfer Different Temperatures Main Patch Inp Hemt Ac Stress Growth Pressure High Breakdown Voltage Metal Pattern Dual Output Image Sensor Noise Mitigation Metal Layer Schottky Barrier Height Linear Energy Transfer(LET) Microstrip Circulator Hydrogen Silsesquioxane(HSQ) Mobile System Energy Barrier Energy Level Unconditionally Stable(US) Digital Circuit Current Density Gan Epilayer Double-Gate(DG) Physical Properties Parasitic Components Low Energy Dynamic Test 28 Ghz Air-Bridge Optimum Length Surface Roughness Contact Degradation Device Characterization Wafer Bonding Temperature-Controlled 17 Ghz Global Standards Negative Feedback As 2 Research And Development(R&D) Selective Area Technology Trends Ni-Based 94 Ghz Satellite Synthetic Aperture Radar Operation Test Reliability Evaluation Multi-Layer Metal Critical Defects Level Shifter 200 Ghz Time Exponent Hot Electrons Dc Output Drain Electrode Crossover Time 5g Wireless Communication Direct Contact Input Return Loss Hole Trapping Load-Pull Lattice Matched Rf Measurement Degradation Factor Low Sheet Resistance Electron Confinement Gallium Nitride (Gan) Load Change 2-D Electron Gas Transfer Rate Thermal Expansion Coefficient(TEC) Gan Films Full-Load Surface Wave Threading Dislocation Density High Voltage Operation Conduction Loss Resistive Component 2d Material Gan-On-Si Hemts Model And Simulation Key Technology Top Electrode Electronics And Optoelectronics Low Temperature Co-Fired Ceramic (Ltcc) Substrate Current Gain Cutoff Frequency Subthreshold Swing(SS) Transport Properties Down-Conversion Inductance Extraction Thermal Cycling Storage Test Power Limiter Pico-Cell Stress Conditions Channel Structure Direct Bonded Copper(DBC) Gaas Mmic Line Regulation Blocking Voltage Environmental Concerns Normal Operation Fin-Gate 77 Ghz Pin Diode Surface Treatment Method Lattice Mismatch Simplified Circuit Model Edge-Type Dot Pattern Low On-Resistance Semiconductor Device I-V Measurement Dangling Bonds Temperature-Dependent Rf Signal Rising Rate Packaging Technology Tunable Bandgaps Test Circuit Failure Analysis Composite Metal Buffer Structure Stop Layer Drain Saturation Current Wafer-Scale Semiconductor Package Pulsed Mode Mm-Wave Applications Bandwidth Enhancement Gas Reduction Heteroepitaxial Growth Gate Foot Rated Power Gan Power Device Physical Model Insertion Layer Loss Characteristics Noise Level Average Efficiency Cross Regulation Current-Voltage Measurements Device Modeling Operating Frequency Range Surface Characteristics Temperature And Pressure Protection Layer Wideband Operation Device Isolation Direct Current Resistance(DCR) Shunt Feedback Current Direction Forward Current Reference Device Pull Test Switching Frequency Inter-Stage Human Body Model Band Power Lead Free Solder Alloy Optical Devices Growth Conditions Surface Mounting Carbon-Doped Microelectronic Devices Etch Profile Single-Gate(SG) 5g System Peak Voltage Surface Mount Device Various Substrates Chemical Deposition Gate Control Xrd Data Drain Bias High Power Devices Lattice Constant Passive Terahertz Imaging Pulse Width Saturation Drain Current Multilayer Design Native Oxide Layer Delay Time Plasma Process Open Stub Global Optimization Iii-Nitride Defect-Free Gold Plating Intermediate Frequency One Cycle De-Embedding Surface Morphology Stress Effects Side Gate Barrier Layers Form Factor Rf Receiver Oxide-Semiconductor Field-Effect Transistors Actual Operation Van Der Waals Interaction S 22 Device Processing Layer Thickness Raman Spectroscopy Q Factor Power Factor Correction Converter Optoelectronic Integrated Circuit Rf Amplifier State Performance Device Packaging Antenna Bandwidth High Current High Resolution Temperature Profile Process Technique Driving Circuit Amplifier Circuit Inductively Coupled Plasma Etching Contact Region Heat Dissipation X-Band Radar On-Chip Length Scaling Low Annealing Temperature Efficiency Improvement Simulation And Measurement Model Parameter Information And Communication Technologies(ICTs) Etching Technique Static And Dynamic Performances Critical Electric Field Bulk Growth Major Switching Digital Etch Optical Communications Line Type Si Devices Radio Over Fiber(RoF) Performance Deterioration Channel Properties Power Converter Device Fabrication Impedance Match Mobility Degradation Aln Substrate Band 3 Satellite Communication System Anode Current X-Ray Photoelectron Spectroscopy (Xps) Mos Transistor Design Guidelines Accurate Model Radiation Effects Output Stability Epitaxial Wafer Wet Chemical Etching Mobility Extraction Method Development Trends Semiconductor Heterostructure Thermal Performance Coulomb Scattering Vt Shift Compact Size Common-Source Interface Quality Metal Interface Direct Current Characteristics Optimum Distance Passivation Thickness Double Plasma Atomic Composition Van Der Waals Heterostructure High Carrier Concentration Yttrium Iron Garnet High-Density Dc Performance Via Etch Recess Etch Trapping Effects Planar-Gate Wide Temperature Range Width Effects Critical Inductance Noise Performance High-Speed Devices Limiting Factor Practical Implementation Sin Passivation Residual Stress Signal Line Fiber-Optic Communications Power Gan Power Loop 5g Networks Organic Vapor Broad Bandwidth Heterostructure Field Effect Transistors Fluorine Ions Two-Dimensional Simulation Co-Firing Stable Structure Cu Film Specific Contact Resistance Optimal Condition N-Type Doping High Temperature Operation Applied Physics Metamorphic High Electron Mobility Transistor(mHEMT) Schottky Layer MOS-HEMT Short Wavelength High Frequency Operation Radiation-Induced Aesa Radar Thickness Variation Semiconductor Packaging National Defense Dual Stack Stress Dependent Active Region Low Loss Tangent Solid State Power Amplifier Cpw Line Temperature Humidity Bias(THB) Input Power Key Device Pulse Generator Power Signal Cleaning Process Trap Sites Half-Bridge Power Module Ceramic Substrate System In Package(SIP) Capacitive Coupling Dc Current Etching Method Electrical Measurements High Resistance Platform Development Cross-Sectional Area(CSA) Electric Bike Active And Passive Front Side Design Method Transmission Line Model Bonding Structure Low Damage Quaternary Alloy Control Gate High Figure Of Merit Treatment Process Battery Electric Vehicles(BEVs) Process Conditions High Switching Speed Output Ripple Gallium Oxide Dc And Rf Performance Electro Static Discharge(ESD) Shift Mechanism Lumped Elements Noise Characteristic Output Characteristics True-Time Delay Practical Use Deterioration Mechanism Spectroscopic Analyses Gate Operation Transport Characteristics Thermal Effects Bonding Wires Multi-Layer Substrate Bulk Crystal Growth Ohmic Contact Resistance Battery Voltage Power And Frequency(HVPF) Stability Parameter Junction Temperature 25 Years Dual Gate(DG) Low Noise Amplifier (Lna) Improved Performance 300 Ghz Design And Implementation Patch Resonator Ge-Based Gan Technology Lattice Temperature Switching Noise Different Substrates Fin Width Network Analyzer(NA) Degradation Rate Smooth Morphology Positive And Cascode Mixer Channel Quality Rise Rate Voltage Standing Wave Ratio Process Technology Parallel-Plate Initialization Vector(IV) Capping Layer Green Sheet Higher Frequency 11 Ghz Gan Capping Conversion Loss Rapid Thermal Annealing(RTA) Theoretical Calculation Thick Copper Structure Analysis Tmah Etching Conversion Gain Thermal Diffusion High Output Power Stress Engineering Mass Production Parasitic Element Reflection Loss Duty Cycle(DC) Active Electronically Scanned Array(AESA) Technical Development Gate Coupling Frequency Properties Quality Improvement Vth Shift Etch Selectivity Reverse Voltage Property Improvement Epitaxy Growth Carrier Transport Ku-Band Circuit Complexity Experimental Data Measurement Results Atomically Thin Wet Etching Contact Reliability Charging Effects Stability Improvement Metal-Insulator-Metal (Mim) Capacitor Charging Time Surface Charge Metal-Semiconductor Interface Fabrication Method Low Switching High-Rate Size Dependence X-Ray Diffraction (Xrd) Supply Voltage High Mobility Floating Gate Substrate Effects 55 Ghz Low Parasitic Inductance High Temperature Characterization Contact Area Device Reliability Rf Power Amplifier Metal Stacking Single-Layer Power Switching Device Metalorganic Chemical Vapor Deposition High-Efficiency Operation Power Levels 1200 V Crystalline Quality Extrinsic Gate Capacitance Load Regulation Trans-Impedance Amplifier(TIA) Diode Characteristics C-Plane Sapphire Substrate Electron Beam Lithography Reactive Ion Etching Antenna Structure Atomic Force Microcopy Snap-Back Storage Life Continuous Wave(CW) Interface Trap Patch Antenna Wide Beamwidth Capacitance-Voltage Threading Dislocations(TDs) Millimeter-Wave Band Production Technology Coupling Effects Lateral Dimensions Switching Time Front-End Rapid Development