ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Algan/Gan Heterostructure Power Amplifiers(PAs) Normally-Off Gate Length Compound Semiconductor 5 Nm T-Shaped Gate Schottky Barrier Diode(SBD) T-Gate Device Performance Maximum Oscillation Frequency Gate Recess Components Technology Gan Heterostructures Sic Substrate Pseudomorphic High Electron Mobility Transistor(pHEMT) Gate Width High Performance Gate Dielectric Metal-Insulator-Semiconductor(MIS) Electrical Properties(I-V curve) Recessed Gate Passivation Layer Dielectric Layer Field Plate Carrier Mobility Sapphire Substrates Etching Conditions 6 Ghz Small Signal Gain Silicon Carbide(3C-SiC) Dc Characteristics And Gate Head Size Device Characteristics Rf Applications Maximum Output Power Output Power Density High Power Applications Gate Insulator Radiation Hardness Drain Voltage Power Gain Microwave Characteristics Low-Rate Threshold Voltage Shift Electrical Characterization Rf Characteristics Proton Radiation Off-State Leakage Cvd Diamond Radar System Dc-Dc Converters Two-Dimensional Electron Gas(2DEG) Enhancement-Mode Stray Inductance Surface Treatments Next-Generation Two-Step S-Band Channel Thickness Gan Hemt Devices Power Semiconductor Fabrication Process Via-Hole Large-Scale Device Properties Algaas/Ingaas/Gaas Phemts Comparative Study Mechanical Stress Nitride Layer X-Band Applications Power Losses Power Amplifier Mmic Recess Depth Silicon Nitride 9.5 GHZ Gan-On-Sic Hemt Millimeter-Wave Wireless(MMW) Epitaxial Layer Thermal Behavior Wireless System Atomic Force Microscope(AFM) Charge Trapping Gate Resistance Total Ionizing Dose Effects Electrical Characteristics Input Voltage Thin Film Resistor Fiber Optic Turn-Off Low Voltage Input Reflection Coefficient Proton Irradiation Maximum Frequency Center Frequency Wireless Communication System 2.4 Ghz Hexagonal Boron Nitride(h-BN) 3 V Self-Heating Effect(SHE) Plasma-Enhanced Chemical Vapor Deposition (Pecvd) High Power Performance Algan/Gan-On-Si Millimetre-Wave High Gain Stress Measurement Device Degradation Gain Flatness 30 Ghz Power Added Efficiency(PAE) Unconditional Stability Gate Bias Stress Mmic Power Amplifier Depletion-Mode Dc Measurements 10 Ghz Gate Leakage Current Back Barrier Power Inductor National Defense Insertion Loss Smart Lighting Etching Rate Multilayer Circuit Gan Hemt Technology Electromagnetic Interference Equivalent Circuit Model(ECM) Sensor Node Thermal Properties Platform Development Bi-Layer 7 Mm Power Characteristics Schottky Contacts E-Beam Lithography Scattering Parameters(S-parameters) Light Sources Performance Degradation Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Wireless Personal Area Network(WPAN) Optical Communications Gan Surface Energy Loss Power Factor Correction (Pfc) Converter Gain Compression Mobility Behavior Ground Planes(GP) Turn-On Threshold Voltage Dynamic Characteristics Design And Fabrication 70 Ghz Transmission Electron Microscopy(TEM) Etch-Stop Degradation Mechanism Matching Network Parasitic Capacitance Power Hemt Rf Isolation Pinch-Off Etch Depth Gate Shape Commercial Products Diode Ideality Factor Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) 700 V Transfer Characteristics Power Conversion System Metal Contact 5g Mobile Co-Fired Ceramics Coplanar Waveguide Feeding(CPW) Ghz Band Channel Mobility Stage Structure Gallium Arsenide(GaAs) High Temperature Storage Network Applications Trapped Charge Cost-Effective Tetramethylammonium Hydroxide Pre-Passivation Diode Parameters Plate Structure Metal Deposition Microstrip Coupled Line Ceramic Technology Atomic Force Microscopy (Afm) Subthreshold Slope(SS) Measurement Data State-Of-The-Art Switching Characteristics Diamond Substrate Wireless Local Area Networks(WLANs) Amplifier Design Aperture Coupled Input/Output Matching On/Off Current Ratio Reliability Test Dbc Substrate Saturation Velocity 220 Ghz Transconductance (Gm) Electron Trapping Reverse Recovery Charge Input And Output Algan/Gan Mishemts Wireless Transceiver Module Packaging Material 60 Ghz Wireless Communication Filtering Function Icp Etching Ohmic Metal Compressive Stress Circuit Board Switching Loss Gan Power Amplifier Narrow-Band Filtering Wire-Bonding Technique Gate Voltage Etch Rates Current Status Ion Implantation High Thermal Conductivity Yield Enhancement Double-Deck Gan Device Theoretical And Experimental Analysis F Max Low Current Radiation Tolerance Ka-Band Electrical Resistance Recess Gate Sin X Channel Layer Systematic Study Performance Analysis Gan-On-Diamond 20 Nm Schottky Diode Mobile Handset Silicon Substrate Radiated Emission 18 Ghz Gate Capacitance Radar Applications Sic Sbd Si-Based Tensile Stress Parallel Feedback Hetero-Interface Three-Terminal Temperature Dependence Sic Device Parasitic Effects Antenna Gain Ribbon Wire Class B Insulating Layer Wide Bandgap Semiconductor Gan Fet Pulsed Power Dielectric Resonator Antenna(DRA) Displacement Damage Access Region Local Oscillation Current Collapse High-Frequency Applications Thz Imaging System High Power Density Gas Mixture Signal Leakage Electrical Devices Normally-On Minimum Noise Figure Output Voltage Temperature Effect Channel Length Nicr Thin Film Si Substrate Performance And Reliability Storage Test Inductance Extraction Optical Devices Trans-Impedance Amplifier(TIA) Small-Sized Xrd Data Pulse Generator Wet Chemical Etching Space Applications High-Temperature Operation Pulse Width Tmah Etching Multilayer Design Transistor Devices Current-Voltage Characteristics High Resistance 28 Ghz Improved Performance Dangling Bonds Defect-Free Air-Bridge Frequency Properties Technology Trends Recess Etch Interference Test Actual Operation Insulated Gate Bipolar Transistor 3.5 Ghz Heteroepitaxial Growth High Frequency Band Layer Thickness Device Packaging Radiation Energy Dc Output Antenna Bandwidth Fluoride-Based Plasma Treatment Thermal Effects Crossover Time Charging Effects Amplifier Circuit Metal-Insulator-Metal (Mim) Capacitor Stability Improvement Contact Region Lithography Process Unconditionally Stable CF 4 Blocking Voltage S 11 Various Substrates Electrical Engineers Stability Parameter Low Switching Operating Frequency Range Device Isolation Dual Gate(DG) Supply Voltage Transfer Rate Substrate Effects Ohmic Behavior Radio Frequency Characteristics Current Direction Gan Buffer Layer Switching Noise Metalorganic Chemical Vapor Deposition Performance Deterioration Growth Conditions Thermoelectric Device Dual Stack System Cost Aln Substrate Smooth Morphology Current Gain Cutoff Frequency Crystalline Quality State Performance Deterioration Mechanism Circuit Complexity Limiting Factor Low Annealing Temperature Efficiency Improvement Si Semiconductor Power Gan Reactive Ion Etching(RIE) Low Noise Amplifier (Lna) Two-Dimensional Simulation Cu Film Specific Contact Resistance Thermal Expansion Coefficient(TEC) Device Reliability Short Wavelength 2 Mm Double-Pulse Semiconductor Packaging Channel Properties Power Converter 5g Network Laser Lift-Off Metal Pattern Plasma Etching Process Rise Rate Optoelectronic Devices Metal Diffusion Stress Conditions Noise Mitigation Mobile System Stable Process Development Trends Atomic Force Microcopy Low Dielectric Constant 77 Ghz Signal Modeling High Power Devices Patch Antenna Delay Time Low Energy Dynamic Test Pulse Power Stress Engineering Optimal Conditions Common-Source Design Method Rising Rate Packaging Technology Temperature-Controlled Lateral Dimensions 17 Ghz Global Standards Switching Frequency Inter-Stage High Voltage Operation Metamorphic High Electron Mobility Transistor(mHEMT) Band Power Impedance Match Inp Hemt Ac Stress High-Efficiency Operation Main Patch Low Loss Tangent Electron Beam Lithography Anode Current Down-Conversion Cpw Line Single-Gate(SG) Iii-Nitrides Process Technology Power Signal Noise Sources Operating Parameters Mm-Wave Application High Mobility Microstrip Circulator Thermal Performance Fin-Gate Plasma Damage Snap-Back Dc Current Conversion Gain Current Density Capacitance-Voltage Millimeter-Wave Band Different Modes Parasitic Element Temperature-Dependent Peak Current Device Characterization Contact Degradation Direct Current Characteristics Stress Effects Double Plasma Operating Conditions Form Factor Heterogeneous Integration C-Doped Rf Receiver S-Parameter Measurement Via Etch 60ghz Communication Vth Shift Stop Layer Shift Mechanism Critical Inductance Electro-Static Discharge(ESD) High Reliability Aluminum Wires Key Technology Diamond Semiconductor Carbon-Doped Material Properties Ltcc Technology 5g System Power Limiter Information And Communications Technologies(ICTs) Cascode Mixer Radiation Effects Line Regulation Key Device Environmental Concerns Half-Bridge Power Module Gan Capping Thick Copper Digital Circuit Native Oxide Layer Sheet Thickness Low On-Resistance Physical Properties Reflection Loss Broad Bandwidth Optimum Length Metal Interface High Carrier Concentration Energy Dispersive X-Ray Spectroscopy(EDX) Radio Over Fiber(ROF) 94 Ghz Operation Test Reverse Voltage Composite Metal Multi-Layer Metal Intermediate Frequency Residual Stress Spectroscopic Analyses Surface Defects Physical Model Various Conditions Matching Circuit Insertion Layer Degradation Factor Short-Channel Effects Surface Characteristics Wideband Operation Load Impedance Direct Current Resistance(DCR) Frequency Variation Sin Deposition Low Parasitic Inductance Digital Etch Reliability Evaluation Applied Bias Reference Device Conduction Loss Antenna Structure High Frequency Operation Trap Sites Theoretical Calculation Surface Treatment Method Saturation Drain Current Storage Life Structure Analysis Dot Pattern Plasma Process Barrier Layers I-V Measurement Surface Roughness De-Embedding Rf Signal Molybdenum-Copper Rapid Development Interface Quality Bonding Structure Technical Development Central Region As 2 Selective Area Oxide-Semiconductor Field-Effect Transistors Output Ripple Van Der Waals Interaction Width Effects Interface Trap Output Characteristics Power Factor Correction Converter Practical Use Multi-Layer Substrate Bonding Wires Linear Extrapolation Sin Passivation Wet Etching 5g Wireless Communication Tunable Bandgap Device Applications Bulk Crystal Growth Signal Line Charging Time Low Sheet Resistance Model Tests Growth Temperature Failure Analysis(FA) Load-Pull Fabrication Method X-Ray Diffraction (Xrd) Fluorine Ions Co-Firing Design And Implementation Ge-Based Negative Feedback Lossy Transmission Line Si Devices Floating Gate Quaternary Alloy High-Density Bottom Plate Hydrogen Silsesquioxane Ni-Based N-Type Doping Energy Levels Gallium Oxide Mobile Devices Wet And Dry Etching Ultralow Power(ULP) Wafer-Scale Pulsed Mode Semiconductor Package 200 Ghz Raman Spectroscopy Ku-Band Gate Control Temperature Profile Direct Contact Wide Temperature Range Van Der Waals Heterostructure Lattice Matched Loss Characteristics Time And Energy Rf Measurement Yttrium Iron Garnet Average Efficiency Current-Voltage Measurements Gallium Nitride (Gan) Power And Frequency(HVPF) High Switching Speed Multi-Purpose Static And Dynamic Performances Stable Structure Bulk Growth High Breakdown Field Contact Area Metal Stacking Model And Simulation Carrier Transfer Single-Layer Different Substrates Electronics And Optoelectronics Power Switching Device Mobility Degradation Fin Width Fabrication Technology Active Region Dual Output Atomic Layer Deposition Method Thermal Cycling Peak Voltage Metal Layer Surface Mount Device Schottky Barrier Height Communication Technologies S 22 Lumped Elements Device Processing Lithography Technology Gas Reduction Experimental Data Rf Amplifier Gate Foot Process Technique Drain Electrode Gan Power Device S-Parameter Extraction Length Scaling Radio Frequency Applications Cross Regulation Quality Improvement Dynamic Load Electron Confinement 25 Years Rf Properties Etching Technique 2-D Electron Gas High Temperature Characterization Gan Semiconductor Thermal Stability(TGA) Sic Mosfet Applied Physics High-Resolution Schottky Layer Layer Composition Thickness Variation Microstrip Line Gan-On-Si Hemts Top Electrode Stress Dependent Harsh Environments 1200 V Subthreshold Swing(SS) High Breakdown Voltage Anode And Cathode Energy Barrier Direct Bonded Copper(DBC) Cleaning Process Drain Bias Scanning Electron Microscopy(S.E.M.) Output Stability Continuous Wave(CW) Edge-Type Simplified Circuit Model Double-Gate(DG) Semiconductor Device High Current Electric Bike Cross-Sectional Area(CSA) One Cycle Gold Plating Surface Morphology Lattice Constants Low Damage Co-Integration Human Body Model(HBM) Device Modeling Rf Power Amplifier Simulation And Measurement Organic Vapor Model Parameter Set Up 300 Ghz Battery Electric Vehicles 55 Ghz Patch Resonator Global Optimization Lattice Temperature Quality-Factor(Q-factor) Surface Wave Silicon Heterojunction Full-Load Forward Current Bias Circuit Lead Free Solder Alloy Different Temperatures Radiation Resistance Degradation Rate Etch Profile Voltage Standing Wave Ratio(VSWR) Network Analyzer X-Ray Photoelectron Spectroscopy (Xps) Mos Transistor Channel Quality Capping Layer Gaas Mmic Chemical Deposition Parallel-Plate Initialization Vector(IV) Accurate Model Epitaxial Wafer Junction Temperature Semiconductor Heterostructure Conversion Loss Pin Diode Ceramic Substrate Passive Terahertz Imaging Gan Epilayer Wide Beamwidth Threading Dislocations(TDs) Coupling Effects Active And Passive Transmission Line Model Switching Time Bandwidth Enhancement Optimum Distance Gas Channel Buffer Structure Open Stub Power Levels Low Temperature Co-Fired Ceramic (Ltcc) Substrate O 3 Growth Pressure Positive And Microelectronic Devices Satellite Communication System Solid State Power Amplifier Hysteresis Phenomenon Load Regulation I-V Characteristic(Transport property) Temperature Humidity Bias(THB) Diode Characteristics Heat Dissipation Input Power Channel Structure C-Plane Sapphire Substrate Green Sheet Mobility Extraction Method Wafer Bonding Etch Selectivity Capacitive Coupling System In Package(SIP) Thermal Diffusion Data Transfer Performance Improvement Coulomb Scattering Parasitic Components Etching Method Vt Shift Front Side Surface Layer Duty Cycle(DC) Gate Coupling Control Gate High Figure Of Merit Treatment Process Voltage Performance Trapping Effects Transistor Characteristics High Rate Property Improvement Drain Saturation Current Epitaxy Growth Carrier Transport High-Speed Devices Noise Performance Time Exponent Fine Control Radio Frequency (Rf) Performance Optimum Thickness Gate Operation Asynchronous Processor Contact Reliability Electrical Measurements Noise Level Reflect Signal Passivation Thickness Zeta Potential(Surface charge) Side Gate Load Conditions Research And Development Atomic Composition 40 Nm Rapid Thermal Annealing(RTA) Process Conditions Noise Characteristics Test Circuit High Output Power Nanometer-Scale Working Temperature Bipolar Transistors Critical Defects Gate Electrode Linear Energy Transfer True-Time Delay Measurement Results Transport Characteristics Atomically Thin Level Shifter Lattice Mismatch X-Band Radar Practical Implementation Input Return Loss Inductively Coupled Plasma Etching Hole Trapping Ohmic Contact Resistance Hot Electrons Power Loop Metal-Semiconductor Interface Size Dependence Load Change Heterostructure Field Effect Transistors Temperature And Pressure High-Speed Switching Rated Power Shunt Feedback On-Chip Critical Electric Field Major Switching Gan Films Line Type Pull Test Threading Dislocation Density 2d Material Oxygen Plasma Treatment MOS-HEMT Resistive Component Radiation-Induced Contact Interface