상세정보
등록 SOI BiCMOS 기술을 이용한 저전력 반도체 소자 제조방법
- 출원번호
- 12068161 (2008.02.04)
- 공개번호
- 20080142843 (2008.06.19)
- 등록번호
- 7943995 (2011.05.17)
- 출원국
- 미국
- 협약과제
- 03MB3700, 차세대 통합 휴대 단말 기술, 조경익
- 초록
- Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
- KSP 제안 키워드
- Fabrication method, Heat generation, High Speed, Leakage current, Low-Power, Operation range, Power Consumption, Power semiconductor, SOI substrate, Si-based, SiGe HBT, low power consumption, low voltage, power semiconductor devices, semiconductor device
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | SOI BiCMOS 기술을 이용한 저전력 반도체 소자 제조 방법 | 미국 |