SOI BiCMOS 기술을 이용한 저전력 반도체 소자 제조방법
강진영, 이승윤, 조경익
- 7943995 (2011.05.17)
03MB3700, 차세대 통합 휴대 단말 기술,
- Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
- KSP 제안 키워드
- Fabrication method, Heat generation, High Speed, Leakage current, Low-Power, Operation range, Power Consumption, Power semiconductor, SOI substrate, Si-based, SiGe HBT, low power consumption, low voltage, power semiconductor devices, semiconductor device