상세정보
등록 다중 게이트 모스 트랜지스터 및 그 제조 방법
- 출원번호
- 11012695 (2004.12.16)
- 공개번호
- 20050224880 (2005.10.13)
- 등록번호
- 7335945 (2008.02.26)
- 출원국
- 미국
- 협약과제
- 02MB5900, 모바일 디스플레이용 SOD 핵심기술 개발, 이진호
- 초록
- Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.
- KSP 제안 키워드
- Channel Width, High performance, MOS transistor, Silicon On Insulator(SOI), driving capability