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Registered MULTI-GATE MOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Lee Dae Woo, Kwon Sung-Ku, Kim Jongdae, Byoung Gon Yu, Yang Yil Suk, Roh Tae Moon, Park Il-Yong
- Application No.
- 11012695 (2004.12.16)
- Publication No.
- 20050224880 (2005.10.13)
- Registration No.
- 7335945 (2008.02.26)
- Country
- UNITED STATES
- Project Code
- 02MB5900, Development of SOD Core Technology for Mobile Display, Lee Jin Ho
- Abstract
- Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.
- KSP Keywords
- Channel Width, High performance, MOS transistor, Silicon On Insulator(SOI), driving capability