상세정보
등록 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압 전계효과 트랜지스터 및 그 제조 방법
- 출원번호
- 11182671 (2005.07.15)
- 공개번호
- 20060105528 (2006.05.18)
- 등록번호
- 7233018 (2007.06.19)
- 출원국
- 미국
- 협약과제
- 03MB5300, 나노소자기반 회로 설계기술 개발, 김종대
- 초록
- Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압 전계효과 트랜지스터 및 그 제조 방법 | 대한민국 | KIPRIS |