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Registered HIGH VOLTAGE MOSFET HAVING Si/SiGe HETEROJUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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HIGH VOLTAGE MOSFET HAVING Si/SiGe HETEROJUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Cho Young Kyun, Kim Jongdae, Roh Tae Moon, Kwon Sung-Ku, Lee Dae Woo
- Application No.
- 11182671 (2005.07.15)
- Publication No.
- 20060105528 (2006.05.18)
- Registration No.
- 7233018 (2007.06.19)
- Country
- UNITED STATES
- Project Code
- 03MB5300, Development of semiconductor circuit design based on the nano-scaled device, Kim Jongdae
- Abstract
- Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.
- KSP Keywords
- Breakdown voltage(BDV), Epitaxial layer, Field-effect transistors(FETs), High Voltage, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Oxide semiconductor, Relaxed SiGe, Si layer, Si/SiGe heterojunction, electric field, field effect, heterojunction structure, hot electrons, metal oxide semiconductor, potential well, saturation current, transconductance (gm), vertical electric field