BROWSE
Detail
Registered Silicon-based light emitting diode of high efficiency
- Inventors
- Tae-Youb Kim, Rae-Man Park, Kim Kyung Hyun, Gun Yong Sung
- Application No.
- 11720987 (2005.11.14)
- Publication No.
- 20090242913 (2009.10.01)
- Registration No.
- 7671377 (2010.03.02)
- Country
- UNITED STATES
- Abstract
- Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
- KSP Keywords
- Active Layer, Bragg reflector, Distributed Bragg reflector, N-type, Substrate structure, high efficiency, highly efficient, light-emitting, light-emitting diode(LED), n-type doping, p-Type, silicon-based