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Registered The Structure and its Fabrication Methods of Switching Device with embedded capac itor for High Power Radio Frequency Control Circuits
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The Structure and its Fabrication Methods of Switching Device with embedded capac itor for High Power Radio Frequency Control Circuits
- Inventors
- Mun Jae Kyoung, Hokyun Ahn, Ji Hong Gu, Hae Cheon Kim
- Application No.
- 13004750 (2011.01.11)
- Publication No.
- 20110143507 (2011.06.16)
- Registration No.
- 8697507 (2014.04.15)
- Country
- UNITED STATES
- Project Code
- 04MB1200, SoP(System on Package) for 60 GHz Pico cell Communication, Cho Kyoung Ik
- Abstract
- Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device.
- KSP Keywords
- Breakdown Voltage, Conductive layer, Control Circuit, Distortion characteristics, Dopant concentration, Drain electrode, Fabrication method, High isolation, High power, Insulating layer, Power handling, Power handling capability, Radio frequency control, Radio-frequency, Semi-Insulating, Switching devices, Turn-on, Turn-on voltage, buffer layer, frequency control, gate electrode, insulating substrate, low-distortion, maximum voltage, ohmic contact, semiconductor device