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Registered The Structure and its Fabrication Methods of Switching Device with embedded capac itor for High Power Radio Frequency Control Circuits
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The Structure and its Fabrication Methods of Switching Device with embedded capac itor for High Power Radio Frequency Control Circuits
- Inventors
- Mun Jae Kyoung, Hae Cheon Kim, Ji Hong Gu, Hokyun Ahn
- Application No.
- 13004750 (2011.01.11)
- Publication No.
- 20110143507 (2011.06.16)
- Registration No.
- 8697507 (2014.04.15)
- Country
- UNITED STATES
- Project Code
- 04MB1200, SoP(System on Package) for 60 GHz Pico cell Communication, Cho Kyoung Ik
- Abstract
- Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device.
- KSP Keywords
- Breakdown voltage(BDV), Buffer layer, Conductive layer, Control Circuit, Distortion characteristics, Dopant concentration, Drain electrode, Fabrication method, Frequency control, High power, Ohmic contact, Power handling, Power handling capability, Radio Frequency(RF), Radio frequency control, Semi-Insulating, Switching device, Turn-on, Turn-on voltage, gate electrode, high isolation, insulating layer, insulating substrate, low-distortion, maximum voltage, semiconductor device