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Detail
Registered Triple well SCR for ESD protection
- Inventors
- Kim Kwi Dong, Kwon Jong-Kee, Kim Jongdae
- Application No.
- 12018317 (2008.01.23)
- Publication No.
- 20080128817 (2008.06.05)
- Registration No.
- 7576961 (2009.08.18)
- Country
- UNITED STATES
- Project Code
- 03MB5300, Development of semiconductor circuit design based on the nano-scaled device, Kim Jongdae
- Abstract
- Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.
- KSP Keywords
- Bipolar transistors, Controlled Rectifier, ESD protection, ESD protection circuit, Electro Static Discharge(ESD), Electrostatic discharge (ESD) protection, Electrostatic discharge (ESD) protection circuit, Protection circuit, Semiconductor integrated, Silicon Controlled Rectifier(SCR), Well structure, discharge capacity, integrated circuit(IC), p-well, semiconductor substrate, trigger voltage