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Detail
Registered Triple well SCR for ESD protection
- Inventors
- Kim Kwi Dong, Kwon Jong-Kee, Kim Jongdae
- Application No.
- 12018317 (2008.01.23)
- Publication No.
- 20080128817 (2008.06.05)
- Registration No.
- 7576961 (2009.08.18)
- Country
- UNITED STATES
- Project Code
- 03MB5300, Development of semiconductor circuit design based on the nano-scaled device, Kim Jongdae
- Abstract
- Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.
- KSP Keywords
- Bipolar transistors, Controlled Rectifier, ESD protection, ESD protection circuit, Electro-Static Discharge(ESD), Electrostatic discharge (ESD) protection, Electrostatic discharge (ESD) protection circuit, Integrated circuit, Protection circuit, Semiconductor integrated, Silicon Controlled Rectifier(SCR), Well structure, discharge capacity, p-well, semiconductor substrate, trigger voltage