상세정보
등록 실리콘질화막을 이용한 이중 리세스 구조를 갖는 부정형 고 전자 이동도 트랜지스터의 제조방법
- 출원번호
- 11446750 (2006.06.05)
- 공개번호
- 20070134862 (2007.06.14)
- 등록번호
- 7419862 (2008.09.02)
- 출원국
- 미국
- 협약과제
- 05MB1400, 60GHz Pico Cell 통신용 SoP(60GHz 광대역 무선 LAN 기술 개발), 조경익
- 초록
- Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT). The method includes the steps of: preparing a substrate including a channel layer and a capping layer that is the uppermost layer; forming a source and a drain on the capping layer; forming a first protective layer on the entire surface of the resultant structure and then patterning the first protective layer to expose a portion of the capping layer in a channel region; removing the exposed portion of the capping layer to form a first recess structure; forming a second protective layer on the entire surface of the resultant structure and then patterning the second protective layer to expose a portion of the substrate in the first recess structure so that a second recess structure is formed; forming a multilayered photoresist layer on the entire surface of the resultant structure and then patterning the multilayered photoresist layer to expose a portion of the substrate through the second recess structure and form a gate-shaped opening; and depositing a metal layer to fill the gate-shaped opening and then removing the multilayered photoresist layer to form a gate connected to the substrate through the second recess structure.