BROWSE
Detail
Registered 반도체 소자 및 그 제조 방법
- Inventors
- Choi Chel-Jong, 김용진, 이희덕
- Application No.
- 11345265 (2006.01.31)
- Publication No.
- 20070102706 (2007.05.10)
- Registration No.
- 7605068 (2009.10.20)
- Country
- UNITED STATES
- Project Code
- 05MF1400, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
- Abstract
- Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and silicon, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, and source and drain regions formed in the semiconductor layer; forming a first metal layer on the substrate having the semiconductor layer and the gate electrode; forming a second metal layer on the first metal layer; forming a third metal layer on the second metal layer; forming a nitride layer on the third metal layer; and annealing the substrate having the nitride layer, and forming a silicide layer on the gate electrode and the source and drain regions.
- KSP Keywords
- Insulation layer, Manufacturing method, Nitride layer, Second metal, Source and drain, Thin-Film Transistor(TFT), gate electrode, metal layer, semiconductor device, thin film(TF)