ETRI-Knowledge Sharing Plaform

KOREAN
특허 검색
Status Country
Year ~ Keyword

Detail

Registered SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

사마륨 실리사이드를 이용한 쇼트키 장벽 트랜지스터 제작
이미지 확대
Inventors
Kim Yark Yeon, Choi Chel-Jong, 박병철, Jun Myungsim, Lee Seong Jae, Jang Moon Gyu
Application No.
11485837 (2006.07.13)
Publication No.
20070034951 (2007.02.15)
Registration No.
7545000 (2009.06.09)
Country
UNITED STATES
Project Code
05MF1400, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
Abstract
Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
KSP Keywords
Channel layer, High-K, High-k Dielectric, Leakage current, Metal gate, Metal junction, Schottky barrier, Stable characteristics, Tunnel barrier, Tunnel transistors, insulating layer, insulating substrate, metal layer