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Registered SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Kim Yark Yeon, 박병철, Jang Moon Gyu, Jun Myungsim, Choi Chel-Jong, Lee Seong Jae
- Application No.
- 11485837 (2006.07.13)
- Publication No.
- 20070034951 (2007.02.15)
- Registration No.
- 7545000 (2009.06.09)
- Country
- UNITED STATES
- Project Code
- 05MF1400, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
- Abstract
- Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
- KSP Keywords
- Channel layer, High-K dielectric, Insulating layer, Leakage Current, Metal gate, Metal junction, Schottky barrier, Stable characteristics, Tunnel barrier, Tunnel transistors, high-k, insulating substrate, metal layer