상세정보
등록 사마륨 실리사이드를 이용한 쇼트키 장벽 트랜지스터 제작
- 출원번호
- 11485837 (2006.07.13)
- 공개번호
- 20070034951 (2007.02.15)
- 등록번호
- 7545000 (2009.06.09)
- 출원국
- 미국
- 협약과제
- 05MF1400, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
- KSP 제안 키워드
- Channel layer, High-K, High-k Dielectric, Leakage current, Metal gate, Metal junction, Schottky barrier, Stable characteristics, Tunnel barrier, Tunnel transistors, insulating layer, insulating substrate, metal layer