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Registered SUPERLUMINESCENT DIODE AND METHOD OF MANUFACTURING THE SAME

수퍼루미네슨트 다이오드 및 그 제조방법
이미지 확대
Inventors
Park Moon Ho, Oh Kwang Ryong, Baek Yongsoon
Application No.
11635195 (2006.12.07)
Publication No.
20070223551 (2007.09.27)
Registration No.
7599403 (2009.10.06)
Country
UNITED STATES
Project Code
05MB3600, Photonic device integrated module for optical access network, Oh Kwang Ryong
Abstract
A 1.55 �m SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other
KSP Keywords
Active Layer, InP substrate, Laser diode(LD), Optical amplifier, Optical waveguides, Semiconductor optical amplifiers(SOAs), Superluminescent diodes(SLDs)