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Registered METHOD OF FABRICATING T-GATE
- Inventors
- Shim Jae Yeob, Hong Ju Yeon, Hyung Sup Yoon, Dong Min Kang, Lee Kyung Ho
- Application No.
- 11607417 (2006.12.01)
- Publication No.
- 20070128752 (2007.06.07)
- Registration No.
- 7468295 (2008.12.23)
- Country
- UNITED STATES
- Project Code
- 05MB3700, 40G Module, Myung Hyun Lee
- Abstract
- A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
- KSP Keywords
- Etching process, T-Gate, dry etching, gate electrode, insulating layer, metal layer