상세정보
등록 광학 리소그라피방법을 이용한 미세 티형 게이트의 제조
- 출원번호
- 11607417 (2006.12.01)
- 공개번호
- 20070128752 (2007.06.07)
- 등록번호
- 7468295 (2008.12.23)
- 출원국
- 미국
- 협약과제
- 05MB3700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
- 초록
- A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
- KSP 제안 키워드
- Etching process, T-Gate, dry etching, gate electrode, insulating layer, metal layer