ETRI-Knowledge Sharing Plaform

KOREAN
특허 검색
Status Country
Year ~ Keyword

Detail

Registered Phase change memory devices with micro laser injector

반도체 레이저가 내장된 상변화형 반도체 메모리 소자구조 및 그 제작 방법
이미지 확대
Inventors
Byoung Gon Yu, Kyu-Jeong Choi, Lee Seung-Yun, Yoon Sung Min, Park Young Sam, Nam-Yeal Lee, Ryu Sangouk
Application No.
11635279 (2006.12.07)
Publication No.
20070133272 (2007.06.14)
Registration No.
7417891 (2008.08.26)
Country
UNITED STATES
Project Code
05MB1200, Technology of a nano scale phase change data storage, Byoung Gon Yu
Abstract
Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
KSP Keywords
Laser beam, Laser beam focusing, Layer pattern, Phase Change Material(PCM), Phase change, Phase change memory unit, Semiconductor lasers, Unit cell, beam focusing, memory device