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Detail
Registered Phase change memory devices with micro laser injector
- Inventors
- Byoung Gon Yu, Park Young Sam, Lee Seung-Yun, Yoon Sung Min, Kyu-Jeong Choi, Nam-Yeal Lee, Ryu Sangouk
- Application No.
- 11635279 (2006.12.07)
- Publication No.
- 20070133272 (2007.06.14)
- Registration No.
- 7417891 (2008.08.26)
- Country
- UNITED STATES
- Project Code
- 05MB1200, Technology of a nano scale phase change data storage, Byoung Gon Yu
- Abstract
- Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
- KSP Keywords
- Laser beam focusing, Laser beams, Layer pattern, Phase Change Material(PCM), Phase change, Phase change memory unit, Semiconductor lasers, beam focusing, memory device, unit cell