상세정보
등록 반도체 레이저가 내장된 상변화형 반도체 메모리 소자구조 및 그 제작 방법
- 출원번호
- 11635279 (2006.12.07)
- 공개번호
- 20070133272 (2007.06.14)
- 등록번호
- 7417891 (2008.08.26)
- 출원국
- 미국
- 협약과제
- 05MB1200, 나노급 상변화 정보저장기술 개발, 유병곤
- 초록
- Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
- KSP 제안 키워드
- Laser beam focusing, Laser beams, Layer pattern, Phase Change Material(PCM), Phase change, Phase change memory unit, Semiconductor lasers, beam focusing, memory device, unit cell