상세정보
등록 단일파장 분포귀환형 양자점 반도체 레이저 구조
- 출원번호
- 11595470 (2006.11.09)
- 공개번호
- 20070133639 (2007.06.14)
- 등록번호
- 7606284 (2009.10.20)
- 출원국
- 미국
- 협약과제
- 05MB3800, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
- KSP 제안 키워드
- Active Layer, Clad layer, Contact layer, Distributed feedback, Longitudinal direction, Ohmic contact, Quantum Dot(QD), Ridge waveguides(RWs), Semiconductor lasers, Single wavelength, lithography process, mass production, process time
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 양자점을 포함하는 반도체 레이저 구조물 | 대한민국 | KIPRIS |