Registered
SEMICONDUCTOR LASER STRUCTURE INCLUDING QUANTUM DOT
- Inventors
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이진홍, Hong Sung Ui, Jin Soo Kim, Dae Kon Oh, 곽호상
- Application No.
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11595470 (2006.11.09)
- Publication No.
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20070133639 (2007.06.14)
- Registration No.
- 7606284 (2009.10.20)
- Country
- UNITED STATES
- Project Code
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05MB3800, Semiconductor Quantum Dot Laser Diode for Fibre Communication,
Dae Kon Oh
- Abstract
- Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
- KSP Keywords
- Active Layer, Clad layer, Contact layer, Distributed feedback, Longitudinal direction, Ohmic contact, Quantum Dot(QD), Ridge waveguides(RWs), Semiconductor lasers, Single wavelength, lithography process, mass production, process time
- Family
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