핀치오프 동작 트랜스퍼 트랜지스터를 이용한 씨모스 이미지 센서
민봉기, 송영주, 김미진
- 7671315 (2010.03.02)
05ZB1200, 실리콘-게르마늄 양자채널 나노 신소자 기술,
- Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
- KSP 제안 키워드
- Control Unit, Dark Current, Driving conditions, Fixed-pattern noise(FPN), Image Sensor, Induced charges, Inter-pixel, Operation condition, Pattern noise, Pinch-off, Pixel structure, Turn-on, Turn-on voltage, Voltage control, threshold voltage(Vth)