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Detail
Registered MEMORY DEVICES INCLUDING DIELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Sung-Yool Choi, Ryu Min Ki, Ansoon Kim, Yu Han Young, Chil Seong Ah
- Application No.
- 11607500 (2006.12.01)
- Publication No.
- 20070126045 (2007.06.07)
- Registration No.
- 7960774 (2011.06.14)
- Country
- UNITED STATES
- Project Code
- 05IF1100, Development of Organic Materials for Gigabit Organic Memory, Sung-Yool Choi
- Abstract
- A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
- KSP Keywords
- Bottom electrode, Dielectric thin film, charge trap, dielectric layer, different charge, memory device, simple process, simple structure, thin film(TF), top electrode