상세정보
등록 공간전하 제한전류 특성을 가지는 유전체를 이용한 비휘발성 메모리 소자
- 출원번호
- 11607500 (2006.12.01)
- 공개번호
- 20070126045 (2007.06.07)
- 등록번호
- 7960774 (2011.06.14)
- 출원국
- 미국
- 협약과제
- 05IF1100, 기가비트급 유기 메모리용 유기 신소재 개발, 최성율
- 초록
- A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
- KSP 제안 키워드
- Bottom electrode, Dielectric thin film, charge traps, dielectric layer, different charge, memory device, simple process, simple structure, thin film(TF), top electrode