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Registered DISTRIBUTED BRAGG REFLECTOR (DBR) STRUCTURE IN VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) DIODE, METHOD OF MANUFACTURING THE SAME, AND VCSEL DIODE
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DISTRIBUTED BRAGG REFLECTOR (DBR) STRUCTURE IN VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) DIODE, METHOD OF MANUFACTURING THE SAME, AND VCSEL DIODE
- Inventors
- Kisoo Kim, Won Seok Han, Dae Kon Oh, Kim Sung Bock
- Application No.
- 11544832 (2006.10.05)
- Publication No.
- 20070127535 (2007.06.07)
- Registration No.
- 7369595 (2008.05.06)
- Country
- UNITED STATES
- Project Code
- 05MB3600, Photonic device integrated module for optical access network, Oh Kwang Ryong
- Abstract
- A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
- KSP Keywords
- Band line-up, Bragg reflector, Device characteristics, Distributed Bragg reflector, InP substrate, Line-up, Optical loss, Surface-emitting laser, Type II, Vertical cavity, Vertical cavity surface emitting, refractive index, vertical-cavity surface-emitting laser(VCSEL)