등록 OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL

이미지 확대

OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL

발명자

Bongki Mheen, Kim Hyun Soo, Kim Gyungock, Jeong Woo Park

출원번호

12441381 (2007.08.17)

공개번호

20090261383 (2009.10.22)

등록번호

7928442 (2011.04.19)

출원국

UNITED STATES

협약과제

06MB2800, Silicon-based high-speed optical interconnection IC, Kim Gyungock

초록

Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

KSP 제안 키워드

Buried channel, Cap layer, Dopant diffusion, High-density, Lattice parameter, Optical devices, Semiconductor materials, insulating layer, semiconductor substrate