상세정보
등록 스트레인드 베리드 패널을 구비하는 광소자
- 출원번호
- 12441381 (2007.08.17)
- 공개번호
- 20090261383 (2009.10.22)
- 등록번호
- 7928442 (2011.04.19)
- 출원국
- 미국
- 협약과제
- 06MB2800, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
- KSP 제안 키워드
- Buried channel, Cap layer, Dopant diffusion, High-density, Lattice parameter, Optical devices, Semiconductor materials, insulating layer, semiconductor substrate