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Detail
Registered OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL
- Inventors
- Bongki Mheen, Kim Hyun Soo, Kim Gyungock, Jeong Woo Park
- Application No.
- 12441381 (2007.08.17)
- Publication No.
- 20090261383 (2009.10.22)
- Registration No.
- 7928442 (2011.04.19)
- Country
- UNITED STATES
- Project Code
- 06MB2800, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
- KSP Keywords
- Buried channel, Cap layer, Dopant diffusion, High-density, Lattice parameter, Optical devices, Semiconductor materials, insulating layer, semiconductor substrate