상세정보
등록 이중 구조 핀 전계 효과 트랜지스터 및 그 제조 방법
- 출원번호
- 11924903 (2007.10.26)
- 공개번호
- 20080135935 (2008.06.12)
- 등록번호
- 7759737 (2010.07.20)
- 출원국
- 미국
- 협약과제
- 06MB3100, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- Provided are a dual structure FinFET and a method of fabricating the same. The FinFET includes: a lower device including a lower silicon layer formed on a substrate and a gate electrode vertically formed on the substrate; an upper device including an upper silicon layer formed on the lower device and the vertically formed gate electrode; and a first solid source material layer, a solid source material interlayer insulating layer, and a second solid source material layer sequentially formed between the lower silicon layer and the upper silicon layer. Therefore, the FinFET can be provided which enhances the density of integration of a circuit, suppresses thin film damages due to ion implantation using solid phase material layers, and has a stabilized characteristic by a simple and low-cost process. Also, mobility of an upper device can be improved to enhance current drivability of the upper device, isolation can be implemented through a buried oxide layer to reduce an effect due to a field oxide layer, and raised source and drain can be implemented to reduce serial resistance components of the source and drain to increase current drivability.
- KSP 제안 키워드
- Buried oxide, Buried oxide layer, Dual structure, Ion implantation, Low-cost, Oxide layer, Silicon layer, Solid phase, Solid source, Source and drain, current drivability, gate electrode, insulating layer, thin film(TF)