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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 저전압용 이미지 센서 및 이미지 센서의 트랜스퍼 트랜지스터 구동 방법

저전압용 이미지 센서 및 이미지 센서의 트랜스퍼 트랜지스터 구동 방법
이미지 확대
발명자
민봉기, 송영주, 김미진, 박성수
출원번호
11875513 (2007.10.19)
공개번호
20080099807 (2008.05.01)
등록번호
7829834 (2010.11.09)
출원국
미국
협약과제
06MB1800, 초저전력 RF/HW/SW 통합 SoC, 현석봉
초록
Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
KSP 제안 키워드
CMOS transistor, Driving method, Image Sensor, Physical structure, Transfer gate, gate electrode, low voltage