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Detail
Registered LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF
- Inventors
- Bongki Mheen, 송영주, Kim Mi Jin, Park Seong Su
- Application No.
- 11875513 (2007.10.19)
- Publication No.
- 20080099807 (2008.05.01)
- Registration No.
- 7829834 (2010.11.09)
- Country
- UNITED STATES
- Project Code
- 06MB1800, Integrated Development of UltraLow Power RF/HW/SW SoC, Seok Bong Hyun
- Abstract
- Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
- KSP Keywords
- CMOS transistor, Driving method, Image Sensor, Physical structure, Transfer gate, gate electrode, low voltage