상세정보
등록 장파장 표면방출 레이저 구조및 제조 방법
- 출원번호
- 11951133 (2007.12.05)
- 공개번호
- 20080137692 (2008.06.12)
- 등록번호
- 7680162 (2010.03.16)
- 출원국
- 미국
- 협약과제
- 06MB1900, 광엑세스용 광집적 모듈, 오광룡
- 초록
- Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.
- KSP 제안 키워드
- Active Layer, Etching process, Heat release, Optical Gain, Release layer, Surface-emitting laser, Tunnel junctions, Vertical cavity, Vertical cavity surface emitting, compound semiconductor, long wavelength, semiconductor substrate, thermal conductivity, vertical-cavity surface-emitting laser(VCSEL)
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 장파장 표면 방출 레이저 소자 및 그 제조 방법 | 대한민국 | KIPRIS |