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Detail
Registered HIGH-ISOLATION SWITCHING DEVICE FOR MILLIMETER-WAVE BAND CONTROL CIRCUIT
- Inventors
- Mun Jae Kyoung, Kim Dong-Young, Hae Cheon Kim, Yu Hyun Kyu, Hokyun Ahn, Jong-Won Lim
- Application No.
- 11928410 (2007.10.30)
- Publication No.
- 20080129427 (2008.06.05)
- Registration No.
- 7671697 (2010.03.02)
- Country
- UNITED STATES
- Project Code
- 06MB3800, Components/System for Millimeterwave Passive Image Sensor, Lee Kyung Ho
- Abstract
- Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional �/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost
- KSP Keywords
- Cell structure, Control Circuit, Design and manufacture, Field-effect transistors(FETs), Integrated circuit, Manufacturing yield, Millimeter-wave band, Monolithic integrated, Multi-stage, Off-State, Phase Shifter, Switching device, Transmission line, degree of integration, digital attenuator, field effect, high isolation, insertion loss, manufacturing cost, millimeter wave(mmWave), monolithic integrated circuit, switching characteristics