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Registered PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF

Inventors
Yoon Sung Min, 박태진, 최세영, Byoung Gon Yu
Application No.
12/122152 (2008.05.16)
Registration No.
7952086 (2011.05.31)
Country
UNITED STATES
KSP Keywords
Manufacturing method, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase change, Zn alloy, memory device