Registered
PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF
- Inventors
-
Yoon Sung Min, 박태진, 최세영, Byoung Gon Yu
- Application No.
- 12/122152 (2008.05.16)
- Registration No.
- 7952086 (2011.05.31)
- Country
- UNITED STATES
- KSP Keywords
- Manufacturing method, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase change, Zn alloy, memory device