상세정보
등록 고휘도 다이오드 및 그 제조 방법
- 출원번호
- 12118543 (2008.05.09)
- 공개번호
- 20090152528 (2009.06.18)
- 등록번호
- 7745836 (2010.06.29)
- 출원국
- 미국
- 협약과제
- 07MB1500, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
- KSP 제안 키워드
- Area growth, Broad band, Confinement factor, Growth method, High power, Optical power, Selective area, Selective area growth, Superluminescent diodes(SLDs), high optical power, optical confinement, optical confinement factor, thin layer