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Registered HIGH POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME

고휘도 다이오드 및 그 제조 방법
이미지 확대
Inventors
Jung-Ho Song, Kisoo Kim, Kim Gyungock, Leem Young Ahn
Application No.
12118543 (2008.05.09)
Publication No.
20090152528 (2009.06.18)
Registration No.
7745836 (2010.06.29)
Country
UNITED STATES
Project Code
07MB1500, Silicon-based high-speed optical interconnection IC, Kim Gyungock
Abstract
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
KSP Keywords
Area growth, Broad band, Confinement factor, Growth method, High power, Optical power, Selective area, Selective area growth, Superluminescent diodes(SLDs), high optical power, optical confinement, optical confinement factor, thin layer