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Detail
Registered HIGH POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME
- Inventors
- Jung-Ho Song, Kisoo Kim, Kim Gyungock, Leem Young Ahn
- Application No.
- 12118543 (2008.05.09)
- Publication No.
- 20090152528 (2009.06.18)
- Registration No.
- 7745836 (2010.06.29)
- Country
- UNITED STATES
- Project Code
- 07MB1500, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
- KSP Keywords
- Area growth, Broad band, Confinement factor, Growth method, High power, Optical power, Selective area, Selective area growth, Superluminescent diodes(SLDs), high optical power, optical confinement, optical confinement factor, thin layer