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Registered COMPOSITION FOR ORGANIC POLYMER GATE INSULATING LAYER AND ORGANIC THIN FILM TRANSISTOR USING THE SAME

광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한 유기 박막 트랜지스터
이미지 확대
Inventors
육지호, Kim Seong Hyun, Lim Sangchul, Gi Heon Kim, 김태곤
Application No.
12182577 (2008.07.30)
Publication No.
20090152537 (2009.06.18)
Registration No.
7741635 (2010.06.22)
Country
UNITED STATES
Abstract
Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
KSP Keywords
Chemical resistance, Crosslinking monomer, Organic thin film, Organic thin-film transistors, Polymer network, Semi-interpenetrating, Semi-interpenetrating polymer network(semi-IPN), Surface characteristics, Thin-Film Transistor(TFT), double bonds, electrical characteristics, insulating layer, interpenetrating polymer network, organic polymer, thermal resistance, thin film(TF), vinyl phenol(Poly)