초소형 압저항형 압력 센서 및 그 제조 방법
최창억, 제창한, 정성혜, 이성식, 황건, 이명래, 김윤태, 문석환
- 8261617 (2012.09.11)
07MB2500, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발,
- A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
- KSP 제안 키워드
- Manufacturing method, Oxidation process, Oxide layer, Pressure Sensor, Semiconductor type, Thermal oxidation, piezoresistive pressure sensor, semi-conductor, thermal oxidation process