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Registered MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF
- Inventors
- Chang Auck Choi, Chang Han Je, Lee Myung Lae, Sungsik Lee, Hwang Gunn, Jung Sunghae, Kim Youn Tae, Moon Seok-Hwan
- Application No.
- 12745745 (2008.04.21)
- Publication No.
- 20100251826 (2010.10.07)
- Registration No.
- 8261617 (2012.09.11)
- Country
- UNITED STATES
- Project Code
- 07MB2500, Development of CMOS based MEMS processed multi-functional sensor for ubiquitous environment, Chang Auck Choi
- Abstract
- A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
- KSP Keywords
- Manufacturing method, Oxidation process, Oxide layer, Pressure Sensor, Semiconductor type, Thermal oxidation, piezoresistive pressure sensor, semi-conductor, thermal oxidation process