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구분 출원국
출원년도 ~ 키워드

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등록 초소형 압저항형 압력 센서 및 그 제조 방법

초소형 압저항형 압력 센서 및 그 제조 방법
이미지 확대
발명자
최창억, 제창한, 정성혜, 이성식, 황건, 이명래, 김윤태, 문석환
출원번호
12745745 (2008.04.21)
공개번호
20100251826 (2010.10.07)
등록번호
8261617 (2012.09.11)
출원국
미국
협약과제
07MB2500, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
초록
A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.