상세정보
등록 게르마늄 광 검출기 및 그 형성방법
- 출원번호
- 12404275 (2009.03.13)
- 공개번호
- 20100102412 (2010.04.29)
- 등록번호
- 8698271 (2014.04.15)
- 출원국
- 미국
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
- KSP 제안 키워드
- Buffer layer, Epitaxial layers, Germanium photodetector, High Temperature, amorphous germanium