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Detail
Registered GERMANIUM PHOTODETECTOR AND METHOD OF FABRICATING THE SAME
- Inventors
- Suh Dongwoo, Kim Gyungock, Kim Sang Hoon, Jiho Joo
- Application No.
- 12404275 (2009.03.13)
- Publication No.
- 20100102412 (2010.04.29)
- Registration No.
- 8698271 (2014.04.15)
- Country
- UNITED STATES
- Project Code
- 08MB1600, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
- KSP Keywords
- Buffer layer, Epitaxial layer, Germanium photodetector, High Temperature, amorphous germanium