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Registered SELF ALIGNED FIELD EFFECT TRANSISTOR STRUCTURE

자기 정렬 전계 효과 트랜지스터 구조체
이미지 확대
Inventors
Do Lee-Mi, Baek Kyu-Ha
Application No.
12635661 (2009.12.10)
Publication No.
20100155847 (2010.06.24)
Registration No.
8324689 (2012.12.04)
Country
UNITED STATES
Project Code
08SB1200, 나노임프린트 적용 Sub-30nm Gate MOSFET 연구, Do Lee-Mi
Abstract
Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.
KSP Keywords
Drain electrode, Field-effect transistors(FETs), Source and drain, active region, field effect, gate electrode, self-Aligned, transistor structure