상세정보
등록 자기 정렬 전계 효과 트랜지스터 구조체
- 출원번호
- 12635661 (2009.12.10)
- 공개번호
- 20100155847 (2010.06.24)
- 등록번호
- 8324689 (2012.12.04)
- 출원국
- 미국
- 협약과제
- 08SB1200, 나노임프린트 적용 Sub-30nm Gate MOSFET 연구, 도이미
- 초록
- Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.
- KSP 제안 키워드
- Drain electrode, Field-effect transistors(FETs), Source and drain, active region, field effect, gate electrode, self-Aligned, transistor structure