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Detail
Registered SELF ALIGNED FIELD EFFECT TRANSISTOR STRUCTURE
- Inventors
- Do Lee-Mi, Baek Kyu-Ha
- Application No.
- 12635661 (2009.12.10)
- Publication No.
- 20100155847 (2010.06.24)
- Registration No.
- 8324689 (2012.12.04)
- Country
- UNITED STATES
- Project Code
- 08SB1200, 나노임프린트 적용 Sub-30nm Gate MOSFET 연구, Do Lee-Mi
- Abstract
- Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.