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Registered GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME
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GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME
- Inventors
- Kim Sang Hoon, Kim Gyungock, Suh Dongwoo, Jiho Joo
- Application No.
- 12536098 (2009.08.05)
- Publication No.
- 20100133585 (2010.06.03)
- Registration No.
- 8188512 (2012.05.29)
- Country
- UNITED STATES
- Project Code
- 08MB1600, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.