네가티브 광전도 특성을 갖는 게르마늄 단결정 박막의 성장법 및 이를 이용한 광검출기
김상훈, 김경옥, 서동우, 주지호
- 8188512 (2012.05.29)
08MB1600, 실리콘 기반 초고속 광인터커넥션 IC,
- A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
- KSP 제안 키워드
- Chemical Vapor Deposition, Dislocation density, Epitaxial thin film, Growth method, High Temperature, Low temperature(LT), Reduced pressure, Reduced pressure chemical vapor deposition, Silicon substrate, Surface roughness, Three-stage, Three-stage growth, chemical vapor, thin film(TF), vapor deposition