ETRI-Knowledge Sharing Plaform

KOREAN
특허 검색
Status Country
Year ~ Keyword

Detail

Registered METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION

확산 영역을 포함하는 화합물 반도체 소자의 형성 방법
이미지 확대
Inventors
Miran Park, Kwon Yong-Hwan, Jae-Sik Sim, Dae Kon Oh, Bongki Mheen
Application No.
12508382 (2009.07.23)
Publication No.
20100144123 (2010.06.10)
Registration No.
8030188 (2011.10.04)
Country
UNITED STATES
Project Code
08MB3400, Development of optical component technologies for advanced FTTH, Dae Kon Oh
Abstract
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.
KSP Keywords
Compound semiconductor device, Cooling process, Dopant diffusion, Rapid cooling process(RCP), annealing process, compound semiconductor, liquid nitrogen, rapid cooling, semiconductor device