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Detail
Registered METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION
- Inventors
- Miran Park, Bongki Mheen, Kwon Yong-Hwan, Dae Kon Oh, Jae-Sik Sim
- Application No.
- 12508382 (2009.07.23)
- Publication No.
- 20100144123 (2010.06.10)
- Registration No.
- 8030188 (2011.10.04)
- Country
- UNITED STATES
- Project Code
- 08MB3400, Development of optical component technologies for advanced FTTH, Dae Kon Oh
- Abstract
- Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.
- KSP Keywords
- Compound semiconductor device, Cooling process, Dopant diffusion, Rapid cooling, Rapid cooling process(RCP), annealing process, compound semiconductor, liquid nitrogen, semiconductor device