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Registered TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Yoon Sung Min, Soon-Won Jung, Yang Shinhyuk, Kang Seung Youl, Cho Doo-Hee, Hwang Chi-Sun, Chunwon Byun, Cho Kyoung Ik, Byoung Gon Yu
- Application No.
- 13469558 (2012.05.11)
- Publication No.
- 20120225500 (2012.09.06)
- Registration No.
- 8476106 (2013.07.02)
- Country
- UNITED STATES
- Project Code
- 08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | 투명 비휘발성 메모리 박막 트랜지스터 및 그의 제조 방법 | KOREA | KIPRIS |
| Registered | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | UNITED STATES |