등록
투명 비휘발성 메모리 박막 트랜지스터 및 그의 제조 방법
- 발명자
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윤성민, 정순원, 양신혁, 강승열, 변춘원, 황치선, 조두희, 유병곤, 조경익
- 출원번호
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13469558 (2012.05.11)
- 공개번호
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20120225500 (2012.09.06)
- 등록번호
- 8476106 (2013.07.02)
- 출원국
- 미국
- 협약과제
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08MB2100, 투명전자 소자를 이용한 스마트 창,
조경익
- 초록
- Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
- KSP 제안 키워드
- Low temperature(LT), Low-cost, Low-temperature process, Non-Volatile Memory(NVM), Nonvolatile memory devices, Oxide semiconductor, Source and drain, Temperature process, Thin-Film Transistor(TFT), Transparent semiconductor, Transparent substrate, gate electrode, memory device, organic ferroelectric, thin film(TF), thin layer
- 패밀리
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