등록 Graphene field effect transistor and method of manufacturing the same

이미지 확대

Graphene field effect transistor and method of manufacturing the same

발명자

Chae Byung Gyu, Hyun-Tak Kim

출원번호

12649321 (2009.12.29)

공개번호

20100258787 (2010.10.14)

등록번호

8247806 (2012.08.21)

출원국

UNITED STATES

협약과제

08MB3100, New electronic device using electric current jump, Hyun-Tak Kim

초록

Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.

KSP 제안 키워드

Channel layer, Field-effect transistors(FETs), Insulation layer, field effect, gate electrode, graphene channel, graphene field-effect transistors, on/off ratio