상세정보
등록 그라핀 전계효과 트랜지스터 제조 방법
- 출원번호
- 12649321 (2009.12.29)
- 공개번호
- 20100258787 (2010.10.14)
- 등록번호
- 8247806 (2012.08.21)
- 출원국
- 미국
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.
- KSP 제안 키워드
- Channel layer, Field-effect transistors(FETs), Insulation layer, field effect, gate electrode, graphene channel, graphene field-effect transistors, on/off ratio