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Detail
Registered Graphene field effect transistor and method of manufacturing the same
- Inventors
- Chae Byung Gyu, Hyun-Tak Kim
- Application No.
- 12649321 (2009.12.29)
- Publication No.
- 20100258787 (2010.10.14)
- Registration No.
- 8247806 (2012.08.21)
- Country
- UNITED STATES
- Project Code
- 08MB3100, New electronic device using electric current jump, Hyun-Tak Kim
- Abstract
- Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.