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Detail
Registered NANOWIRE MEMORY
- Inventors
- Yu Han Young, Kim Byunghoon, Oh Soonyoung, Yun Yong Ju, Kim Yark Yeon, Hong Wongi
- Application No.
- 12621809 (2009.11.19)
- Publication No.
- 20100314609 (2010.12.16)
- Registration No.
- 8283654 (2012.10.09)
- Country
- UNITED STATES
- Abstract
- Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.