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Registered NANOWIRE MEMORY

나노선 메모리
이미지 확대
Inventors
Yu Han Young, Kim Byunghoon, Oh Soonyoung, Yun Yong Ju, Kim Yark Yeon, Hong Wongi
Application No.
12621809 (2009.11.19)
Publication No.
20100314609 (2010.12.16)
Registration No.
8283654 (2012.10.09)
Country
UNITED STATES
Abstract
Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.