BROWSE
Detail
Registered ELECTRO-OPTIC DEVICE
- Inventors
- Jeong Woo Park, Kim Gyungock, You Jongbum
- Application No.
- 12652623 (2010.01.05)
- Publication No.
- 20110051222 (2011.03.03)
- Registration No.
- 8320037 (2012.11.27)
- Country
- UNITED STATES
- Project Code
- 09MB1100, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.