ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 광전 소자

광전 소자
이미지 확대
발명자
박정우, 유종범, 김경옥
출원번호
12652623 (2010.01.05)
공개번호
20110051222 (2011.03.03)
등록번호
8320037 (2012.11.27)
출원국
미국
협약과제
09MB1100, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
KSP 제안 키워드
Concentration difference, Doping concentration, Electro-Optic, Electro-optic device, High Speed, Low-Power, Power Consumption, low power consumption