등록 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THEREOF

이미지 확대

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THEREOF

발명자

Hokyun Ahn, Jong-Won Lim, Hyung Sup Yoon, Hae Cheon Kim, Woojin Chang

출원번호

12874102 (2010.09.01)

공개번호

20110057237 (2011.03.10)

등록번호

8518794 (2013.08.27)

출원국

UNITED STATES

협약과제

09MR6700, Development of Radio Wave Propagation Environment and Wireless Transmission Platform Technologies in Tera-Hertz Frequency Range, Tae Jin Chung

초록

Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.

KSP 제안 키워드

Active Layer, Capping layer, Source/drain electrodes, gate electrode, semiconductor device