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Registered POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR

D-mode HEMT 소자의 단일 DC 바이어스 공급회로
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Inventors
Dong Min Kang, Hae Cheon Kim, Hokyun Ahn, Lee Sang-Heung, Kim Dong-Young, Jong-Won Lim, Ji Hong Gu, Woojin Chang
Application No.
12855055 (2010.08.12)
Publication No.
20110037521 (2011.02.17)
Registration No.
8294521 (2012.10.23)
Country
UNITED STATES
Project Code
09ZB1400, Development support for customer-based convergence components, Hee-Bum Jung
Abstract
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
KSP Keywords
High electron, High electron mobility, High-electron mobility transistor(HEMT), Input matching, Matching characteristic, bias circuit, dc bias, depletion-mode, electron mobility, frequency band, matching circuit, negative voltage, power amplifiers(PAs)