등록
D-mode HEMT 소자의 단일 DC 바이어스 공급회로
- 발명자
-
강동민, 김해천, 김동영, 지홍구, 안호균, 이상흥, 장우진, 임종원
- 출원번호
-
12855055 (2010.08.12)
- 공개번호
-
20110037521 (2011.02.17)
- 등록번호
- 8294521 (2012.10.23)
- 출원국
- 미국
- 협약과제
-
09ZB1400, 수요자 중심 융합부품 개발지원,
정희범
- 초록
- Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.