상세정보
등록 D-mode HEMT 소자의 단일 DC 바이어스 공급회로
- 출원번호
- 12855055 (2010.08.12)
- 공개번호
- 20110037521 (2011.02.17)
- 등록번호
- 8294521 (2012.10.23)
- 출원국
- 미국
- 협약과제
- 09ZB1400, 수요자 중심 융합부품 개발지원, 정희범
- 초록
- Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
- KSP 제안 키워드
- High electron, High electron mobility, High electron mobility transistor(HEMT), Input matching, Matching characteristic, Negative voltage, bias circuit, dc bias, depletion mode, electron mobility, frequency band, matching circuit, power amplifiers(PAs)