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Detail
Registered POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR
- Inventors
- Dong Min Kang, Hae Cheon Kim, Hokyun Ahn, Lee Sang-Heung, Kim Dong-Young, Jong-Won Lim, Ji Hong Gu, Woojin Chang
- Application No.
- 12855055 (2010.08.12)
- Publication No.
- 20110037521 (2011.02.17)
- Registration No.
- 8294521 (2012.10.23)
- Country
- UNITED STATES
- Project Code
- 09ZB1400, Development support for customer-based convergence components, Hee-Bum Jung
- Abstract
- Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
- KSP Keywords
- High electron, High electron mobility, High-electron mobility transistor(HEMT), Input matching, Matching characteristic, bias circuit, dc bias, depletion-mode, electron mobility, frequency band, matching circuit, negative voltage, power amplifiers(PAs)