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Detail
Registered NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Yoon Sung Min, Chunwon Byun, Yang Shinhyuk, Park Sang-Hee, Kang Seung Youl, Soon-Won Jung, Byoung Gon Yu, Hwang Chi-Sun
- Application No.
- 12838878 (2010.07.19)
- Publication No.
- 20110049592 (2011.03.03)
- Registration No.
- 8558295 (2013.10.15)
- Country
- UNITED STATES
- Project Code
- 09MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
- KSP Keywords
- Insulating layer, Nonvolatile memory(NVM), Visible Light, buffer layer, gate electrode, memory cell, organic ferroelectric
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | THE TRANSPARENT NON-VOLATILE MEMORY CELL COMPOSED OF THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND MEMORY TRANSISTOR USING ORGANIC FERROELECTRIC THIN FILM AND THE MANUFACTURING METHOD THEREOF | UNITED STATES |