ETRI-Knowledge Sharing Plaform

KOREAN
특허 검색
Status Country
Year ~ Keyword

Detail

Registered THE TRANSPARENT NON-VOLATILE MEMORY CELL COMPOSED OF THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND MEMORY TRANSISTOR USING ORGANIC FERROELECTRIC THIN FILM AND THE MANUFACTURING METHOD THEREOF

산화물 반도체 박막 트랜지스터와 유기 강유전체 메모리 박막 트랜지스터로 구성된 투명 비휘발성 메모리 셀의 구조 및 그 제조 방법
이미지 확대
Inventors
Yoon Sung Min, Yang Shinhyuk, Chunwon Byun, Soon-Won Jung, Byoung Gon Yu, Kang Seung Youl, Hwang Chi-Sun, Park Sang-Hee
Application No.
14022705 (2013.09.10)
Publication No.
20140011297 (2014.01.09)
Registration No.
8716035 (2014.05.06)
Country
UNITED STATES
Project Code
09MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
Abstract
Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
KSP Keywords
Buffer layer, Manufacturing method, Non-Volatile Memory(NVM), Oxide semiconductor, Thin-Film Transistor(TFT), Visible Light, ferroelectric thin film, gate electrode, insulating layer, memory cell, non-volatile, organic ferroelectric, thin film(TF), volatile memory
Family
 
패밀리 특허 목록
Status Patent Country KIPRIS
Registered NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME UNITED STATES