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Detail
Registered METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Inventors
- Koo Jae Bon, Kang Seung Youl, In-Kyu You
- Application No.
- 12766953 (2010.04.26)
- Publication No.
- 20110136296 (2011.06.09)
- Registration No.
- 8198148 (2012.06.12)
- Country
- UNITED STATES
- Project Code
- 09MB2800, Development of mobile flexible IOP platform, Cho Kyoung Ik
- Abstract
- Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.