상세정보
등록 반도체 소자의 제조방법
- 출원번호
- 12766953 (2010.04.26)
- 공개번호
- 20110136296 (2011.06.09)
- 등록번호
- 8198148 (2012.06.12)
- 출원국
- 미국
- 협약과제
- 09MB2800, 모바일 플렉시블 입출력 플랫폼, 조경익
- 초록
- Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
- KSP 제안 키워드
- Active Layer, Insulation layer, Thin-Film Transistor(TFT), gate electrode, semiconductor device, thin film(TF)