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Detail
Registered RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Inventors
- Sung-Yool Choi, Kim Jongyun, Hu Young Jeong
- Application No.
- 12835265 (2010.07.13)
- Publication No.
- 20110133152 (2011.06.09)
- Registration No.
- 8203140 (2012.06.19)
- Country
- UNITED STATES
- Project Code
- 08IB2300, 고신뢰성 charge complex 소재 탐색, Sung-Yool Choi
- Abstract
- A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with the top electrode to form an oxide layer.
- KSP Keywords
- Bottom electrode, Resistive Memory, conductive polymer, memory device, oxide layer, polymer layer, top electrode