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Registered SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

반도체 장치 및 그 형성 방법
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Inventors
In Gyoo Kim, Park Dae Seo, Kim Gyungock, Hong Jun Taek
Application No.
12788542 (2010.05.27)
Publication No.
20110133306 (2011.06.09)
Registration No.
8288185 (2012.10.16)
Country
UNITED STATES
Project Code
09MB1100, Silicon-based high-speed optical interconnection IC, Kim Gyungock
Abstract
Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
KSP Keywords
Buried oxide, Buried oxide layer, Oxide layer, semiconductor device, semiconductor substrate