상세정보
등록 반도체 장치 및 그 형성 방법
- 출원번호
- 12788542 (2010.05.27)
- 공개번호
- 20110133306 (2011.06.09)
- 등록번호
- 8288185 (2012.10.16)
- 출원국
- 미국
- 협약과제
- 09MB1100, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.