Registered
RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Inventors
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Sung-Yool Choi, Hu Young Jeong
- Application No.
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12773228 (2010.05.04)
- Publication No.
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20110133148 (2011.06.09)
- Registration No.
- 8344344 (2013.01.01)
- Country
- UNITED STATES
- Project Code
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08IB2300, 고신뢰성 charge complex 소재 탐색,
Sung-Yool Choi
- Abstract
- Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
- Family
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