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Registered RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

저항형 메모리 장치 및 그 제조 방법
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Inventors
Sung-Yool Choi, Hu Young Jeong
Application No.
12773228 (2010.05.04)
Publication No.
20110133148 (2011.06.09)
Registration No.
8344344 (2013.01.01)
Country
UNITED STATES
Project Code
08IB2300, 고신뢰성 charge complex 소재 탐색, Sung-Yool Choi
Abstract
Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
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Status Patent Country KIPRIS
Registered 저항형 메모리 장치 및 그 제조 방법 KOREA KIPRIS
Registered RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES