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Detail
Registered RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Inventors
- Sung-Yool Choi, Hu Young Jeong
- Application No.
- 13690286 (2012.11.30)
- Publication No.
- 20130089965 (2013.04.11)
- Registration No.
- 8980721 (2015.03.17)
- Country
- UNITED STATES
- Project Code
- 08IB2300, 고신뢰성 charge complex 소재 탐색, Sung-Yool Choi
- Abstract
- Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | 저항형 메모리 장치 및 그 제조 방법 | KOREA | KIPRIS |
| Registered | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | UNITED STATES |