상세정보
등록 유기 박막 트랜지스터 및 그 형성방법
- 출원번호
- 12858868 (2010.08.18)
- 공개번호
- 20110204334 (2011.08.25)
- 등록번호
- 8344366 (2013.01.01)
- 출원국
- 미국
- 협약과제
- 09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
- 초록
- Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.
- KSP 제안 키워드
- Drain electrode, Organic semiconductor, Organic thin film, Organic thin-film transistors, Thin-Film Transistor(TFT), gate dielectric, gate electrode, thin film(TF)