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Registered RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Inventors
- Yong Suk Yang, In-Kyu You, 노용영, Koo Jae Bon, Soon-Won Jung, Kim Kang Dae
- Application No.
- 12915495 (2010.10.29)
- Publication No.
- 20110272661 (2011.11.10)
- Registration No.
- 8278138 (2012.10.02)
- Country
- UNITED STATES
- Abstract
- Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.