상세정보
등록 유기 메모리 소자 및 제조 방법
- 출원번호
- 12915495 (2010.10.29)
- 공개번호
- 20110272661 (2011.11.10)
- 등록번호
- 8278138 (2012.10.02)
- 출원국
- 미국
- 초록
- Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
- KSP 제안 키워드
- Channel layer, Electron channel, Printing process, Resistive memory, Swelling process, annealing process, conductive nanoparticles, memory device