Registered
AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME
- Inventors
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Miran Park, Kwon O-Kyun
- Application No.
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14220431 (2014.03.20)
- Publication No.
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20140206130 (2014.07.24)
- Registration No.
- 8999744 (2015.04.07)
- Country
- UNITED STATES
- Project Code
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09MB2500, Development of optical component technologies for advanced FTTH,
Dae Kon Oh
- Abstract
- Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
- KSP Keywords
- Absorption layer, Avalanche photo diode(APD), Chemical Vapor Deposition, Chemical vapor deposition process, Conductive layer, Metal-Organic, Metalorganic chemical vapor deposition, N-type, Organic chemical, chemical vapor, compound semiconductor, deposition process, n-type substrate, p-Type, vapor deposition, wet etch
- Family
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