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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 반도체 소자 및 이를 제조하는 방법

반도체 소자 및 이를 제조하는 방법
이미지 확대
발명자
서동우, 류호준, 김성복
출원번호
13193690 (2011.07.29)
공개번호
20120145999 (2012.06.14)
등록번호
8993991 (2015.03.31)
출원국
미국
초록
Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.