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Detail
Registered SEMICONDUCTOR DEVICES INCLUDING A NANOWIRE METHODS OF MANUFACTURING THE SAME
- Inventors
- Suh Dongwoo, Kim Sung Bock, Ryu Hojun
- Application No.
- 13193690 (2011.07.29)
- Publication No.
- 20120145999 (2012.06.14)
- Registration No.
- 8993991 (2015.03.31)
- Country
- UNITED STATES
- Abstract
- Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
- KSP Keywords
- dielectric layer, gate electrode, semiconductor device