상세정보
등록 반도체 소자 및 이를 제조하는 방법
- 출원번호
- 13193690 (2011.07.29)
- 공개번호
- 20120145999 (2012.06.14)
- 등록번호
- 8993991 (2015.03.31)
- 출원국
- 미국
- 초록
- Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
- KSP 제안 키워드
- dielectric layer, gate electrode, semiconductor device